242 articles – 3618 Notices  [english version]
.:. Consultation > Par auteurs du labo > Oliviero .:.
20 documents classés par :

Luminescence of a titanate compound under europium ion implantation
Plantevin O., Oliviero E., Dantelle G., Mayer L.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment article in press (2014) [in2p3-00954788 - version 1]
Helium mobility in SON68 borosilicate nuclear glass: A nuclear reaction analysis approach
Bès R., Sauvage T., Peuget S., Haussy J., Chamssedine F. et al
Journal of Nuclear Materials 443 (2013) 544-554 [in2p3-00955427 - version 1]
Chemically sensitive amorphization process in the nanolaminated Cr2AC (A = Al or Ge) system from TEM in situ irradiation
Bugnet M., Mauchamp V., Oliviero E., Jaouen M., Cabioc'h T.
Journal of Nuclear Materials 441 (2013) 133-137 [in2p3-00853276 - version 1]
Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering
Oliviero E., L. David M., F. P. Fichtner P., Beaufort M.F., F. Barbot J.
Journal of Applied Physics 113 (2013) 083515 [in2p3-00824985 - version 1]
Evolution of Ar implanted Amorphous Silicon Dioxide Under High Voltage Electron Beam
Oliviero E., Collin S., Bachelet C., Moeyaert J., A. Borodin V. et al
In Solid State Phenomena - International Conference on Solid-Solid Phase Transformations in Inorganic Materials (PTM 2010), France (2010) [in2p3-00776719 - version 1]
In-situ TEM studies of materials under ion beams: JANNuS dual beam TEM
Kaïtasov O., Fortuna F., Oliviero E., Bachelet C., Delbecq L. et al
IBA 20th international conference on Ion Beam Analysis, Brazil (2011) [in2p3-00771853 - version 1]
JANNuS facility at Orsay: an in-situ TEM for nanosciences and nuclear simulation
Fortuna F., Kaitasov O., Bachelet C., Oliviero E., Gentils A. et al
REI 16th International Conference on Radiation Effects in Insulators, China (2011) [in2p3-00771846 - version 1]
Nanometric Bubble Formation in SiO2 by Ion Implantation: Influence of the Substrate
Oliviero E., Décamps B., Ruault M.-O.
In Synthesis and Engineering of Nanostructures by Energetic Ions - Indo-French conference on Nano-Structuring by Ion Beams, India (2009) [in2p3-00703743 - version 1]
In-situ ion beam TEM experiences feedback from JANNuS-Orsay facility
Fortuna F., Gentils A., Kaitasov O., Bachelet C., Oliviero E. et al
The second workshop on the use of in situ TEM / ion accelerator techniques in the study of radiation damage in solids, États-Unis (2011) [in2p3-00653757 - version 1]
Synergetic effects of dual-beam implantation on the microstructural development in silicon
Fortuna F., A. Borodin V., Ruault M.-O., Oliviero E., A. Kirk M.
Physical Review B 84 (2011) 144118 [in2p3-00651362 - version 1]
Faisceaux d'ions - Applications
Fortuna F., Oliviero E., Ruault M.-O.
Techniques de l'Ingenieur (2010) M4396 [in2p3-00776571 - version 1]
Ion induced ordering of FePt thin films
Plantevin O., Mougin A., Ferré J., Fortuna F., Oliviero E. et al
International Conference on Solid-Solid Phase Transformations in Inorganic Materials, PTM 2010, France (2010) [in2p3-00771745 - version 1]
Synthesis of mesoporous amorphous silica by Kr and Xe ion implantation: Transmission electron microscopy study of induced nanostructures
Oliviero E., Ruault M.-O., Décamps B., Fotuna F., Ntsoenzok E. et al
Microporous and Mesoporous Materials 132 (2010) 163-173 [in2p3-00660814 - version 1]
Faisceaux d'ions - Théorie et mise en œuvre
Fortuna F., Oliviero E., Ruault M.-O.
Techniques de l'Ingenieur (2009) M4395 [in2p3-00776570 - version 1]
Modification of SiO2 by Kr and Xe implantations
Oliviero E., O. Ruault M., Kaïtasov O., Fortuna F., Ntsoenzok E.
In Proceedings of the First Workshop on the Use of in situ TEM / Ion Accelerator Techniques in the Study of Radiation Damage in Solids - First Workshop on the Use of in situ TEM / Ion Accelerator Techniques in the Study of Radiation Damage in Solids, United States (2008) [in2p3-00724656 - version 1]
Helium implantation into 4H-SiC
F. Barbot J., Leclerc S., L. David M., Oliviero E., Montsouka R. et al
Physica Status Solidi A 206 (2009) 1916-1923 [in2p3-00716700 - version 1]
Faisceaux d'ions - Théorie et mise en oeuvre
Fortuna F., Oliviero E., O. Ruault M.
Techniques de l'Ingenieur (2009) M4395 [in2p3-00716671 - version 1]
Interaction of interstitials with buried amorphous layer in silicon
Oliviero E., L. David Ml M., .F. P. Fichtner P.
Dans PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS - International Conference on Extended Defects in Semiconductors (EDS 2008), France (2008) [in2p3-00683325 - version 1]
Helium implanted gallium nitride evidence of gas-filled rod-shaped cavity formation along the c-axis
F. Barbot J., Pailloux F., L. David M., Pizzagalli L., Oliviero E. et al
Journal of Applied Physics 104 (2008) 043526 [in2p3-00828299 - version 1]
Nanocavities induced by neon Plasma Based Ion Implantation in silicon
Beaufort M.F., Barbot J.F., Drouet M., Peripolli S., Oliviero E. et al
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 257 (2007) 750-752 [in2p3-00725284 - version 1]