236 articles – 3603 Notices  [english version]
.:. Consultation > Par auteurs du labo > Palard .:.
3 documents classés par :

Mecanismes de germination et de croissance sous faisceaux d'ions : Co dans Si
Palard M.
Université Paris Sud - Paris XI (1997) [in2p3-00002764 - version 1]
In situ TEM study of the evolution of CoSi$_2$ precipitates during annealing and ion irradiation
Palard M., Ruault M.O., Bernas H., Strobel M., Heinig K.H.
in Microscopy of Semiconducting Materials - Royal Microscopical Society Conference, United Kingdom [in2p3-00001811 - version 1]
Irradiation induced growth of CoSi$_2$ precipitates in Si at 650 degrees C: an in situ study
Palard M., Ruault M.O., Kaitasov O., Bernas H., Heinig K.H.
in Nuclear Instruments and Methods in Physics Research B - New Trends In Ion Beam Processing Of Materials E-Mrs '96 Spring Meeting, France [in2p3-00000512 - version 1]