243 articles – 3643 Notices  [english version]
.:. Consultation > Par auteurs du labo > Ruault .:.
83 documents classés par :
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Enhancement of He-induced cavities in silicon by hydrogen plasma treatment
L. Liu C., Ntsoenzok E., Vengurlekar A., Ashok S., Alquier D. et al
Journal of Vacuum Science and Technology B 23 (2005) 990-994 [in2p3-00024685 - version 1]
fulltext access Final Summary Report on Target Design
Cadiou A., Guertin A., Kirchner T., Stutzmann J.S., Vatre M. et al
Research report (2004) [in2p3-00025250 - version 1]
Shrinkage mechanism of nanocavities in amorphous Si under ion irradiation: An in situ study
Ruault M.O., Ridgway M.C., Fortuna F., Bernas H., Williams J.S.
Nuclear Instruments and Methods in Physics Research Research Section B: Beam Interactions with Materials and Atoms 206 (2003) 912-915 [in2p3-00022247 - version 1]
Consequences of calcium and sulphur spallation product recoils in 9Cr-1 Mo steel: simulation by ion implantation
Amiri G., Ruault M.O., Henry J., Bernas H., Cadel E. et al
In Journal de Physique IV Colloque - Structural Materials for Hybrid Systems: A Challenge in Metallurgy, France [in2p3-00022304 - version 1]
How nanocavities in amorphous Si shrink under ion beam irradiation: An in situ study
Ruault M.O., Fortuna F., Bernas H., Ridgway M.C., Williams J.S.
Applied Physics Letters 81 (2002) 2617-2619 [in2p3-00011971 - version 1]
Silicon nanocrystal formation upon annealing of SiO$_2$ layers implanted with Si ions
Kachurin G.A., Yanovskaya S.G., Volodin V.A., Kesler V.G., Leier A.F. et al
Semiconductors 36 (2002) 647-651 [in2p3-00011893 - version 1]
Interactions of point defects and impurities with open volume defects in silicon
Williams J.S., Ridgway M.C., Conway M.J., Wong Leung J., Williams B.C. et al
In Ion Beam Synthesis and Processing of Advanced Materials - Ion Beam Synthesis and Processing of Advanced Materials, United States [in2p3-00011468 - version 1]
Direct observation of irradiation-induced nanocavity shrinkage in Si
Zhu X.F., Williams J.S., Conway M.J., Ridgway M.C., Fortuna F. et al
Applied Physics Letters 79 (2001) 3416-3418 [in2p3-00010709 - version 1]
Determination of the defect creation mechanism in the mono-silicated fluoroapatite. Disorder modeling under repository conditions
Soulet S., Carpena J., Chaumont J., Krupa J.-C., Ruault M.O.
Journal of Nuclear Materials 299 (2001) 227-234 [in2p3-00019747 - version 1]
The role of nitrogen in the formation of luminescent silicon nanoprecipitates during heat treatment of SiO$_2$ layers implanted with Si$^+$
Kachurin G.A., Yanovskaya S.G., Zhuravlev K.S., Ruault M.O.
Semiconductors 35 (2001) 1182-1186 [in2p3-00010708 - version 1]
Simulation of the $\alpha$-annealing effect in apatitic structures by He-ion irradiation: Influence of the silicate/phosphate ratio and of the OH$^-$/F$^-$ substitution
Soulet S., Carpena J., Chaumont J., Kaitasov O., Ruault M.O. et al
Nuclear Instruments and Methods in Physics Research Research Section B: Beam Interactions with Materials and Atoms 184 (2001) 383-390 [in2p3-00019704 - version 1]
Interaction of defects and metals with nanocavities in silicon
Williams J.S., Ridgway M.C., Conway M.J., Wong-Leung J., Zhu X.F. et al
Dans Nuclear Instruments and Methods in Physics Research B - Materials Science with Ion Beams E-MRS 2000 Spring Meeting Symposium R., France [in2p3-00010363 - version 1]
Ion beam synthesis of CoSi$_2$: influence of surface kinetics on nucleation
Volkov A.E., Ruault M.O., Bernas H., Borodin V.A.
Dans Nuclear Instruments and Methods in Physics Research B - Materials Science with Ion Beams E-MRS 2000 Spring Meeting Symposium R., France [in2p3-00010361 - version 1]
Determination of the defect creation mechanism in fluoroapatite
Soulet S., Chaumont J., Krupa J.C., Carpena J., Ruault M.O.
In Journal of Nuclear Materials - International Workshop of Ceramics for Fusion Energy and other High Radiation Environment 6 Annual Meeting of the American Ceramic Society 102, United States [in2p3-00019232 - version 1]
Preferential amorphization and defect annihilation at nanocavities in silicon during ion irradiation
Williams J.S., Xianfang Z., Ridgway M.C., Conway M.J., Williams B.C. et al
Applied Physics Letters 77 (2000) 4280-4282 [in2p3-00008398 - version 1]
The influence of irradiation and subsequent annealing on Si nanocrystals formed in SiO$_2$ layers
Kachurin G.A., Yanovskaya S.G., Ruault M.O., Gutakovskii A.K., Zhuravlev K.S. et al
Semiconductors 34 (2000) 965-970 [in2p3-00006674 - version 1]
Light particle irradiation effects in Si nanocrystals
Kachurin G.A., Ruault M.O., Gutakovsky A.K., Kaitasov O., Yanovskaya S.G. et al
Dans Nuclear Instruments and Methods in Physics Research B - E-MRS 1998 Spring Meeting Symposium J on Ion Implantation into Semiconductors Oxides and Ceramics, France [in2p3-00001850 - version 1]
Properties of Cd$_(1-x)$Zn$_x$Te crystals grown by high pressure Bridgman for nuclear detection
Fougeres P., Hage-Ali M., Koebel J.M., Siffert P., Hassan S. et al
Dans Journal of Crystal Growth - International Conference on II-VI Compounds 8, France [in2p3-00001874 - version 1]
In situ TEM study of the evolution of CoSi$_2$ precipitates during annealing and ion irradiation
Palard M., Ruault M.O., Bernas H., Strobel M., Heinig K.H.
in Microscopy of Semiconducting Materials - Royal Microscopical Society Conference, United Kingdom [in2p3-00001811 - version 1]
Monte Carlo simulation of ion beam-assisted solid phase epitaxy
Fortuna F., Bernas H., Nedellec P., Ruault M.O.
Radiation Effects and Defects in Solids 141 (1997) 83- [in2p3-00001810 - version 1]