245 articles – 3647 Notices  [english version]
HAL : in2p3-00137307, version 1

Fiche détaillée  Récupérer au format
Journal of Physics D 39 (2006) 3969-3973
Synthesis of buried SiC using an energetic ion beam
Y.S. Katharria, S. Kumar, F. Singh, J.C. Pivin1, D. Kanjilal

Buried silicon carbide (SiC) was synthesized at room temperature using implantation of 150 keV C+ ions in n-type Si (100) and Si (111) substrates. The dose of implanted C+ was varied from 4 × 1017 to 8 × 1017 cm-2. Post-implantation annealing at 1000° C for 30 min was carried out in inert ambience. Rutherford backscattering spectroscopy, x-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy and Raman spectroscopy were employed to characterize the samples. FTIR and Raman spectroscopic techniques in combination with the XRD analysis confirmed the development of the β-SiC phase in the samples. The average size of the SiC precipitates was estimated to be 9 nm from XRD analysis.
1 :  CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
Physique/Matière Condensée/Science des matériaux