245 articles – 3674 Notices  [english version]
 HAL : in2p3-00169581, version 1
 15th International Conference on Ion Beam Modification of Materials, Taormina : Italie
 Helium behavior in $\alpha$-SiC ceramics investigated by NRA technique
 T. Sauvage1, G. Carlot2, G. Martin1, L. Vincent3, P. Garcia2, M.F. Barthe1, A. Gentils1, P. Desgardin1
 (2007)
 The mechanisms involved in helium migration in α-SiC are investigated through the evolution of its microstructure and of the concentration profiles following annealing at 1300 °C/30 min for fluences of 1 and 5 × 1015 3He cm−2 and a He implantation energy of 500 keV. Helium profiling is performed using the 3He(d,α)1H NRA technique with an improved detection limit of 5 at ppm. The NRA and TEM techniques clearly show that depending on the initial fluence, a proportion of the helium is trapped within the grain and a part of the helium is released. Analysis of the helium profile changes after annealing enabled to determine a value of the volume diffusion coefficient close to (8 ± 1) × 10−17 m2 s−1 for both fluences studied.
 Thème(s) : Physique/Matière Condensée/Science des matériaux
 Mot(s)-clé(s) : Helium – Implantation – Diffusion – NRA – Depth profiling – TEM
 in2p3-00169581, version 1 http://hal.in2p3.fr/in2p3-00169581 oai:hal.in2p3.fr:in2p3-00169581 Contributeur : Dominique Girod <> Soumis le : Mardi 4 Septembre 2007, 14:01:36 Dernière modification le : Mardi 4 Septembre 2007, 14:20:33