HAL : in2p3-00169581, version 1

DOI : 10.1016/j.nimb.2007.01.006

Fiche détaillée

Récupérer au format BibTeX - EndNote - TEI - RefWorks -

15th International Conference on Ion Beam Modification of Materials, Taormina : Italie

Helium behavior in $\alpha$-SiC ceramics investigated by NRA technique

T. Sauvage1, G. Carlot2, G. Martin1, L. Vincent3, P. Garcia2, M.F. Barthe1, A. Gentils1, P. Desgardin1

(2007)

The mechanisms involved in helium migration in α-SiC are investigated through the evolution of its microstructure and of the concentration profiles following annealing at 1300 °C/30 min for fluences of 1 and 5 × 1015 3He cm−2 and a He implantation energy of 500 keV. Helium profiling is performed using the 3He(d,α)1H NRA technique with an improved detection limit of 5 at ppm. The NRA and TEM techniques clearly show that depending on the initial fluence, a proportion of the helium is trapped within the grain and a part of the helium is released. Analysis of the helium profile changes after annealing enabled to determine a value of the volume diffusion coefficient close to (8 ± 1) × 10−17 m2 s−1 for both fluences studied.

1 :	CERI - Centre d'Études et de Recherches par Irradiation
2 :	LLCC - Laboratoire des Lois de Comportement du Combustible
3 :	CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse

Thème(s)

:

Physique/Matière Condensée/Science des matériaux

Mot(s)-clé(s) : Helium – Implantation – Diffusion – NRA – Depth profiling – TEM

in2p3-00169581, version 1

http://hal.in2p3.fr/in2p3-00169581

oai:hal.in2p3.fr:in2p3-00169581

Contributeur : Dominique Girod <>

Soumis le : Mardi 4 Septembre 2007, 14:01:36

Dernière modification le : Mardi 4 Septembre 2007, 14:20:33