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15th International Conference on Ion Beam Modification of Materials, Taormina : Italie
Temperature dependence of the damage induced by Cs ion implantation in zirconia
L. Vincent1, L. Thomé1, F. Garrido1, O. Kaitasov1

Single crystals of cubic zirconia were implanted at RT and 750 °C with increasing fluences of low energy Cs2+ ions. In situ RBS/C and TEM experiments were performed to determine the amount of damage, the nature of radiation defects and the possible occurrence of Cs precipitates as a function of the Cs fluence at both temperatures. Results indicate that the damage build-up and the nature of defects depend on the implantation temperature. TEM micrographs do not reveal the formation of any secondary phase for both implantation temperatures up to 3 at.%.
1 :  CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
Physique/Matière Condensée/Science des matériaux
Zirconia – Ion implantation – RBS/C – TEM