| HAL : in2p3-00169873, version 1 |
| DOI : 10.1016/j.nimb.2007.01.086 |
| Fiche détaillée | Récupérer au format |
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| 15th International Conference on Ion Beam Modification of Materials, Taormina : Italie |
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| Temperature dependence of the damage induced by Cs ion implantation in zirconia |
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| L. Vincent1L. Thomé1F. Garrido1O. Kaitasov1 |
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| (2007) |
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| Single crystals of cubic zirconia were implanted at RT and 750 °C with increasing fluences of low energy Cs2+ ions. In situ RBS/C and TEM experiments were performed to determine the amount of damage, the nature of radiation defects and the possible occurrence of Cs precipitates as a function of the Cs fluence at both temperatures. Results indicate that the damage build-up and the nature of defects depend on the implantation temperature. TEM micrographs do not reveal the formation of any secondary phase for both implantation temperatures up to 3 at.%. |
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| 1 : | CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse |
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| Thème(s) | : | Physique/Matière Condensée/Science des matériaux |
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| Zirconia – Ion implantation – RBS/C – TEM |
| in2p3-00169873, version 1 | |
| http://hal.in2p3.fr/in2p3-00169873 | |
| oai:hal.in2p3.fr:in2p3-00169873 | |
| Contributeur : Dominique Girod | |
| Soumis le : Mercredi 5 Septembre 2007, 12:58:42 | |
| Dernière modification le : Mercredi 5 Septembre 2007, 13:22:37 | |