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Correlation between implantation defects and dopants in Fe-implanted SiC
Declemy A., Debelle A., Dupeyrat C., Thome L., Monnet I. et al
Applied Physics A: Materials Science and Processing 106 (2012) 679-685 - http://hal.in2p3.fr/in2p3-00682552
Physique/Matière Condensée/Science des matériaux
Correlation between implantation defects and dopants in Fe-implanted SiC
A. Declemy1, A. Debelle2, C. Dupeyrat1, L. Thome2, I. Monnet3, D. Eyidi1
1 :  PPRIME - Institut Pprime
http://www.pprime.fr/
CNRS : UPR3346 – Université de Poitiers – ENSMA
France
2 :  CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
http://www-csnsm.in2p3.fr/
CNRS : UMR8609 – IN2P3 – Université Paris XI - Paris Sud
batiments 104 et 108 - 91405 Orsay Campus
France
3 :  CIMAP - UMR 6252 - Centre de recherche sur les Ions, les MAtériaux et la Photonique
http://cimap.ensicaen.fr/
Ecole Nationale Supérieure d'Ingénieurs de Caen – Université de Caen Basse-Normandie – CNRS : UMR6252 – CEA : DSM/IRAMIS
CIMAP - UMR 6252, Bd H. Becquerel BP 5133 14070 Caen-cedex 5
France
CSNSM PCI
SiC single crystals were implanted with Fe ions and the effects of implantation temperature, Fe concentration, and subsequent swift heavy ion irradiation on both dopant and damage depth distributions were evaluated by using RBS and channelling techniques. It is found that an increase of the implantation temperature above the threshold temperature for amorphization can lead to the formation of a broad layer (similar to 50 nm) containing a large concentration of implanted Fe atoms (similar to 2 at.%) but almost free of implantation defects. This particular configuration is likely due to dynamic annealing during implantation combined with defect annihilation at the surface. It is only observed when the implanted species concentration does not exceed a critical value (which lies between 2 and 5 at.% in the present system). Post-implantation swift heavy ion irradiation leads to a further decrease of the damage level, while the Fe distribution is not affected. The Fe substitutional fraction has been evaluated in the different tested conditions. A maximum value of similar to 50% is found when implantation is performed at the temperature above that required to prevent amorphization (470 K in the present system). Swift-heavy ion irradiation seems to induce Fe atoms relocation at substitutional positions.

Articles dans des revues avec comité de lecture
2012
Applied Physics A: Materials Science and Processing
Publisher Springer Verlag (Germany)
ISSN 0947-8396 (eISSN : 1432-0630)
106
679-685

CSNSM PCI, GANIL 2012-039 N
Expérience GANIL/CIMAP/SME
SILICON-CARBIDE – ION-IMPLANTATION – RUTHERFORD BACKSCATTERING – MAGNETIC SEMICONDUCTORS – DAMAGE – TEMPERATURE – FERROMAGNETISM – AMORPHIZATION – IRRADIATION – RECOVERY