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Journal of Low Temperature Physics 167 (2012) 1149-1153
Hot Carrier Velocities in Doped and in Ultra-pure Germanium Crystals at Millikelvin Temperatures
J. Domange1, 2, E. Olivieri1, A. Broniatowski1
(2012)

The velocity laws of electrons and holes in germanium single crystals at millikelvin temperatures are determined as a function of the electric field in the aOE (c) 001 > orientation, based on time-of-flight measurements in cryogenic coplanar grid Ge detectors. Results obtained in two n-type crystals (|N (a) -N (d) |< 10(10) cm(-3) and doped to 10(11) cm(-3)) are compared with the experimental data from previous investigations, and shown to be consistent with Monte-Carlo simulations of carrier transport.
1 :  CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
2 :  IRFU - Institut de Recherches sur les lois Fondamentales de l'Univers (ex DAPNIA)
CSNSM PS1
CSNSM INSTR
Physique/Physique/Instrumentations et Détecteurs
Dark matter search – Germanium cryogenic detectors – Time-of-flight measurements – Hot carriers transport – DRIFT VELOCITY – DETECTORS