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Journal of Low Temperature Physics 167 (2012) 1149-1153
Hot Carrier Velocities in Doped and in Ultra-pure Germanium Crystals at Millikelvin Temperatures
J. Domange1, 2, E. Olivieri1, A. Broniatowski1

The velocity laws of electrons and holes in germanium single crystals at millikelvin temperatures are determined as a function of the electric field in the aOE (c) 001 > orientation, based on time-of-flight measurements in cryogenic coplanar grid Ge detectors. Results obtained in two n-type crystals (|N (a) -N (d) |< 10(10) cm(-3) and doped to 10(11) cm(-3)) are compared with the experimental data from previous investigations, and shown to be consistent with Monte-Carlo simulations of carrier transport.
1 :  CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
2 :  IRFU - Institut de Recherches sur les lois Fondamentales de l'Univers (ex DAPNIA)
Physique/Physique/Instrumentations et Détecteurs
Dark matter search – Germanium cryogenic detectors – Time-of-flight measurements – Hot carriers transport – DRIFT VELOCITY – DETECTORS