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Magnetic properties of Mn-implanted 6H-SiC single crystal
Al Azri M., Elzain M., Bouziane K., M. Cherif S., Roussigne Y. et al
Journal of Applied Physics 111 (2012) 07C315 - http://hal.in2p3.fr/in2p3-00713721
Physique/Matière Condensée/Science des matériaux
Magnetic properties of Mn-implanted 6H-SiC single crystal
M. Al Azri, M. Elzain, K. Bouziane, S. M. Cherif1, Y. Roussigne1, A. Declemy2, M. Drouet2, L. Thome3
1 :  LSPM - Laboratoire des Sciences des Procédés et des Matériaux
http://www.lspm.cnrs.fr/
CNRS : UPR3407 – Université Paris 13 – Institut Galilée – Université Sorbonne Paris Cité (USPC)
Institut Galilée, Université Paris 13, 99 avenue Jean-baptiste Clément, F-93430 Villetaneuse
France
2 :  PhyMat - Laboratoire de Physique des Matériaux
http://lmp.sp2mi.univ-poitiers.fr
Université de Poitiers – CNRS : UMR6630
Université de Poitiers - UFR Sciences SP2MI, Boulevard Marie et Pierre Curie BP 30179 - 86 962 FUTUROSCOPE CHASSENEUIL CEDEX
France
3 :  CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
http://www-csnsm.in2p3.fr/
CNRS : UMR8609 – IN2P3 – Université Paris XI - Paris Sud
batiments 104 et 108 - 91405 Orsay Campus
France
CSNSM PCI
The electronic and magnetic structures of Mn-doped 6H-SiC have been investigated using ab initio calculations. Various configurations of Mn sites and vacancy types have been considered. The calculations showed that a substitutional Mn atom at either Si or C sites possesses a magnetic moment. The Mn atom at Si site possesses larger magnetic moment than Mn atom at C site. The magnetic properties of ferromagnetically and antiferromagnetically coupled pair of Mn atoms in the presence of vacancies have also been explored. Our calculations show that antiferromagnetically coupled pair of Mn atoms at Si sites with neighboring C vacancy is magnetically more stable. Relaxation effects were also studied. The results are correlated to the measured magnetic properties obtained for Mn-implanted 6H-SiC for various Mn concentrations. (C) 2012 American Institute of Physics.

Articles dans des revues avec comité de lecture
2012
Journal of Applied Physics (J. Appl. Phys.)
Publisher American Institute of Physics (AIP)
ISSN 0021-8979 
111
07C315
(C) 2012 American Institute of Physics.

CSNSM PCI
SILICON-CARBIDE – SEMICONDUCTORS – FERROMAGNETISM – FE