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Recrystallization of amorphous ion implanted silicon carbide after thermal annealing
Miro S., Costantini J.-M., Sorieul S., Gosmain L., Thomé L.
Philosophical Magazine Letters 92 (2012) 633-639 - http://hal.in2p3.fr/in2p3-00739573
Planète et Univers/Sciences de la Terre/Minéralogie
Recrystallization of amorphous ion implanted silicon carbide after thermal annealing
S. Miro1, J.-M. Costantini1, S. Sorieul2, L. Gosmain1, L. Thomé3
1 :  SRMP - Service de recherches de métallurgie physique
CEA : DEN/DMN
CEA Saclay 91191 Gif sur Yvette
France
2 :  CENBG - Centre d'Etudes Nucléaires de Bordeaux Gradignan
http://www.cenbg.in2p3.fr/
CNRS : UMR5797 – IN2P3 – Université Sciences et Technologies - Bordeaux I
Chemin du Solarium - BP 120 - 33175 Gradignan Cedex
France
3 :  CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
http://www-csnsm.in2p3.fr/
CNRS : UMR8609 – IN2P3 – Université Paris XI - Paris Sud
batiments 104 et 108 - 91405 Orsay Campus
France
INSTRU
CSNSM PCI
Single crystals of 6H-SiC were implanted at room temperature with 4-MeV Au ions to a fluence of 1015cm 2. Raman spectra showed that full amorphization was achieved. The recrystallization process was studied by micro-Raman spectrometry after isochronal thermal annealing between 700 and 1500 C. The spectra permitted the evolution upon annealing of Si-C bonds, and also of Si-Si and C-C bonds, to be followed. Amorphous phase relaxation takes place below 700 C; then recrystallization of the 6H polytype sets in at 700 C. At 900 C crystallites with different crystalline states are formed. Moreover, Raman spectra provide evidence of graphitic nanocluster formation at 1500 C.

Articles dans des revues avec comité de lecture
2012
Philosophical Magazine Letters (Philos. Mag. Lett.)
Publisher Taylor & Francis: STM, Behavioural Science and Public Health Titles
ISSN 0950-0839 (eISSN : 1362-3036)
92
633-639

CSNSM PCI
SiC – Raman spectroscopy – recrystallization – irradiation effects