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Physical Review B 86 (2012) 100102
Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals
A. Debelle1, M. Backman, L. Thome1, W. J. Weber, M. Toulemonde2, S. Mylonas1, Alexandre Boulle3, O. H. Pakarinen, N. Juslin, F. Djurabekova, K. Nordlund, F. Garrido1, D. Chaussende4
(2012)

The healing effect of intense electronic energy deposition arising during swift heavy ion (SHI) irradiation is demonstrated in the case of 3C-SiC damaged by nuclear energy deposition. Experimental (ion channeling experiments) and computational (molecular dynamics simulations) studies provide consistent indications of disorder decrease after SHI irradiation. Furthermore, both methods establish that SHI-induced recrystallization takes place at amorphous-crystalline interfaces. The recovery process is unambiguously accounted for by the thermal spike phenomenon.
1 :  CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
2 :  CIMAP - UMR 6252 - Centre de recherche sur les Ions, les MAtériaux et la Photonique
3 :  SPCTS - Science des Procédés Céramiques et de Traitements de Surface
4 :  LMGP - Laboratoire des matériaux et du génie physique
Axe 3 : organisation structurale multiéchelle des matériaux
CSNSM PCI
Physique/Matière Condensée/Science des matériaux
INORGANIC INSULATORS – COLLISION CASCADES – IRRADIATION – AMORPHIZATION – RADIATION – TRACKS