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Thermal Oxidation of Sintered Silicon Carbide Used for Diesel Particulate Filter Walls
Thomé T., Capelle M., Thomé L., Prenant T., Néret M.
Journal of Ceramic Science and Technology 3 (2012) 89-94 - http://hal.in2p3.fr/in2p3-00752933
Physique/Matière Condensée/Science des matériaux
Thermal Oxidation of Sintered Silicon Carbide Used for Diesel Particulate Filter Walls
T. Thomé1, M. Capelle1, L. Thomé2, T. Prenant, M. Néret
1 :  PSA Peugeot Citroën
PSA Peugeot Citroën
Centre Technique de Velizy, Route de Gisy, 78 943 Vélizy-Villacoublay
France
2 :  CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
http://www-csnsm.in2p3.fr/
CNRS : UMR8609 – IN2P3 – Université Paris XI - Paris Sud
batiments 104 et 108 - 91405 Orsay Campus
France
CSNSM PCI
The temperature dependence of the thermal oxidation of sintered silicon carbide (SiC) used for diesel particulate filter walls (DPF) is investigated. Silicon carbide samples are heated at temperatures between 770 K and 1470 K for different annealing times to study the effect of both the temperature and the duration on the oxidation kinetics. The thickness and composition of the oxide layers are characterized by means of XPS and RBS. Silicon oxycarbides (SiCxOy) are first formed and then silicon dioxide (SiO2) appears above 770 K. Different types of SiO2 layers can be identified. The compounds obtained depend on thermal oxidation conditions.

Articles dans des revues avec comité de lecture
2012
Journal of Ceramic Science and Technology
3
89-94

CSNSM PCI
SiC – SiO2 – thermal properties – oxycarbide – oxidation