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46 documents classés par :
Date
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Nom du premier auteur
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Date de dépôt
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Composition and structure of titanium carbonitride thin film synthesized by ion implantation
Guemmaz M., Mosser A., Grob J.J., Sens J.C., Stuck R.
Surface and Coatings Technology
80
(1996) 53-56 [in2p3-00015151 - version 1]
A new high energy implantation facility for materials research at the CRN, Strasbourg
Stoquert J.P., Grob J.J., Muller D., Rohr P., Siffert P.
in
Nuclear Instruments and Methods in Physics Research B
-
Application of Accelerators in Research and Industry. Twelfth International Conference
, United States [in2p3-00019435 - version 1]
$^(12)$C-$^(15)$N and $^(16)$O stopping powers between 0.5 and 3.4 Mev in solid targets
Abdesselam M., Stoquert J.P., Grob J.J., Siffert P.
Nuclear Instruments and Methods in Physics Research Research Section B: Beam Interactions with Materials and Atoms
73
(1993) 115-122 [in2p3-00015837 - version 1]
Gold and platinium accumulation on buried defects in silicon
Rohr P., Grob J.J., Siffert P.
Nuclear Instruments and Methods in Physics Research Research Section B: Beam Interactions with Materials and Atoms
80/81
(1993) 640-643 [in2p3-00015775 - version 1]
Stopping power of $^(16)$O-$^(48)$Ti and $^(108)$Ag ions in C and Al between 0.5 and 3. Mev/U
Abdesselam M., Stoquert J.P., Guillaume G., Hage-Ali M., Grob J.J. et al
Nuclear Instruments and Methods in Physics Research Research Section B: Beam Interactions with Materials and Atoms
72
(1992) 293-301 [in2p3-00016019 - version 1]
Dynamics of lattice damage accumulation for MeV ions in silicon
Golanski A., Grob A., Grob J.J., Holland O.W., Pennycook S.J. et al
Dans
Nuclear Instruments and Methods in Physics Research B
-
Spring Meeting of the European Materials Research Society (E-Mrs) Symposium C on High Energy Ion Implantation
, France [in2p3-00015898 - version 1]
Damage created in silicon by 1 MeV O$^+$ ions as a function of beam power
Grob A., Grob J.J., Siffert P.
Dans
Nuclear Instruments and Methods in Physics Research B
-
Spring Meeting of the European Materials Research Society (E-Mrs) Symposium C on High Energy Ion Implantation
, France [in2p3-00015889 - version 1]
Cu I and Au stopping powers in solid targets
Abdesselam M., Stoquert J.P., Guillaume G., Hage-Ali M., Grob J.J. et al
Nuclear Instruments and Methods in Physics Research Research Section B: Beam Interactions with Materials and Atoms
72
(1992) 7-15 [in2p3-00015888 - version 1]
Stopping power of C and Al ions in solids
Abdesselam M., Stoquert J.P., Guillaume G., Hage-Ali M., Grob J.J. et al
Nuclear Instruments and Methods in Physics Research Research Section B: Beam Interactions with Materials and Atoms
61
(1991) 385-393 [in2p3-00004929 - version 1]
Slowing down of heavy ions in solids near the stopping power maximum
Abdesselam A., Stoquert J.P., Guillaume G., Hage-Ali M., Grob J.J. et al
Nuclear Instruments and Methods in Physics Research Research Section B: Beam Interactions with Materials and Atoms
56-57
(1991) 355- [in2p3-00016109 - version 1]
A dechanneling investigation of mev oxygen implanted silicon
Grob A., Grob J.J., Thevenin P., Siffert P.
Nuclear Instruments and Methods in Physics Research Research Section B: Beam Interactions with Materials and Atoms
58
(1991) 236-241 [in2p3-00015427 - version 1]
Damage induced by high electronic stopping power in SiO$_2$ quartz
Toulemonde M., Balanzat E., Bouffard S., Grob J.J., Hage-Ali M. et al
Nuclear Instruments and Methods in Physics Research Research Section B: Beam Interactions with Materials and Atoms
46
(1990) 64- [in2p3-00016158 - version 1]
A study of 2 MeV oxygen implantation to form deeply buried SiO$_2$ layers
Grob J.J., Grob A., Thevenin P., Siffert P., D'Anterroches C. et al
Journal of Materials Research
4
(1989) 1227-1232 [in2p3-00019452 - version 1]
Determination of concentration profiles by elastic recoil detection with a $\Delta$E-E gas telescope and high energy heavy incident ions
Stoquert J.P., Guillaume G., Hage-Ali M., Grob J.J., Ganter C. et al
Nuclear Instruments and Methods in Physics Research Research Section B: Beam Interactions with Materials and Atoms
44
(1989) 184- [in2p3-00016184 - version 1]
High quality silicon-on-insulator structures formed by oxygen implantation and annealing
Vu D.P., Haond M., D'Anterroches C., Oberlin J.C., Golanski A. et al
Applied Physics Letters
52
(1988) 819- [in2p3-00017507 - version 1]
Transverse straggling of MeV oxygen ions implanted in silicon
Grob J.J., Grob A., Thevenin P., Siffert P.
Nuclear Instruments and Methods
34
(1988) 830- [in2p3-00017486 - version 1]
Ion beam induced atomic mixing in Fe/Al bilayered samples
Gaboriaud R.J., Jaouen C., Grob J.J., Grob A.
Applied Physics A: Materials Science and Processing
41
(1986) 127- [in2p3-00017672 - version 1]
Electrical properties of hydrogen bombarded silicon surfaces
Barhdadi A., Ponpon J.P., Grob A., Grob J.J., Mesli A. et al
Vacuum
36
(1986) 705-710 [in2p3-00006152 - version 1]
Rapid thermal annealing and titanium silicide formation
Levy D., Ponpon J.P., Grob A., Grob J.J., Stuck R.
Applied Physics A: Materials Science and Processing
38
(1985) 23- [in2p3-00006489 - version 1]
Formation of palladium and titanium silicides by rapid thermal annealing
Levy D., Ponpon J.P., Grob A., Grob J.J., Siffert P.
Physica B
129
(1985) 205- [in2p3-00006488 - version 1]