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22 documents classés par : Date Titre Nom du premier auteur Type de documents Date de dépôt

1 - 2

Formation of Ni silicide from Ni(Au) films on $^(111)$Si Mangelinck D., Gas P., Grob A., Pichaud B., Thomas O. Journal of Applied Physics 79 (1996) 4078-4086 [in2p3-00015166 - version 1]

Dynamics of lattice damage accumulation for MeV ions in silicon Golanski A., Grob A., Grob J.J., Holland O.W., Pennycook S.J. et al Dans Nuclear Instruments and Methods in Physics Research B - Spring Meeting of the European Materials Research Society (E-Mrs) Symposium C on High Energy Ion Implantation, France [in2p3-00015898 - version 1]

Damage created in silicon by 1 MeV O$^+$ ions as a function of beam power Grob A., Grob J.J., Siffert P. Dans Nuclear Instruments and Methods in Physics Research B - Spring Meeting of the European Materials Research Society (E-Mrs) Symposium C on High Energy Ion Implantation, France [in2p3-00015889 - version 1]

A dechanneling investigation of mev oxygen implanted silicon Grob A., Grob J.J., Thevenin P., Siffert P. Nuclear Instruments and Methods in Physics Research Research Section B: Beam Interactions with Materials and Atoms 58 (1991) 236-241 [in2p3-00015427 - version 1]

A study of 2 MeV oxygen implantation to form deeply buried SiO$_2$ layers Grob J.J., Grob A., Thevenin P., Siffert P., D'Anterroches C. et al Journal of Materials Research 4 (1989) 1227-1232 [in2p3-00019452 - version 1]

Transverse straggling of MeV oxygen ions implanted in silicon Grob J.J., Grob A., Thevenin P., Siffert P. Nuclear Instruments and Methods 34 (1988) 830- [in2p3-00017486 - version 1]

Ion beam induced atomic mixing in Fe/Al bilayered samples Gaboriaud R.J., Jaouen C., Grob J.J., Grob A. Applied Physics A: Materials Science and Processing 41 (1986) 127- [in2p3-00017672 - version 1]

Electrical properties of hydrogen bombarded silicon surfaces Barhdadi A., Ponpon J.P., Grob A., Grob J.J., Mesli A. et al Vacuum 36 (1986) 705-710 [in2p3-00006152 - version 1]

Electrical behaviour of thermally diffused silicon solar cells submitted to rapid annealing Fogarassy E., Mesli A., Courcelle E., Grob A., Siffert P. Applied Physics A: Materials Science and Processing 37 (1985) 221- [in2p3-00006492 - version 1]

Rapid thermal annealing and titanium silicide formation Levy D., Ponpon J.P., Grob A., Grob J.J., Stuck R. Applied Physics A: Materials Science and Processing 38 (1985) 23- [in2p3-00006489 - version 1]

Formation of palladium and titanium silicides by rapid thermal annealing Levy D., Ponpon J.P., Grob A., Grob J.J., Siffert P. Physica B 129 (1985) 205- [in2p3-00006488 - version 1]

Formation of Palladium silicide by rapid thermal annealing Levy D., Grob A., Grob J.J., Ponpon J.P. Applied Physics A: Materials Science and Processing 35 (1984) 141- [in2p3-00018090 - version 1]

A semiempirical formula describing the recoil yield in silicon Grob J.J., Mesli N., Grob A., Siffert P. Applied Physics A: Materials Science and Processing 35 (1984) 161-167 [in2p3-00018089 - version 1]

Laser annealing of silicon layers amorphized by molecular ions Muller J.C., Grob J.J., Grob A., Stuck R., Siffert P. Radiation Effects 48 (1980) 115- [in2p3-00017909 - version 1]

SOLUBILITY LIMIT OF DOPANTS IN SILICON IRRADIATED BY RUBY LASER Fogarassy E., Stuck R., Grob J., Grob A., Siffert P. Journal de Physique Colloques 41, C4 (1980) C4-41-C4-45 [jpa-00219922 - version 1]

Effects of laser pulses on virgin and heavily damaged silicon Muller J.C., Grob A., Grob J.J., Stuck R., Hage-Ali M. et al in Defects and Radiation effects in semiconductors - International Conference on defects and Radiation effects in semiconductors, France [in2p3-00019424 - version 1]

Low cost ion implantation procedure for the realization of silicon solar cells in a continuous way Muller J.C., Grob A., Grob J.J., Stuck R., Siffert P. Dans Thirteenth IEEE Photovoltaic Specialists Conference-1978 (1978) 711-716 [in2p3-00018415 - version 1]

Laser-beam annealing of heavily damaged implanted layers on silicon Muller J.C., Grob A., Grob J.J., Stuck R., Siffert P. Applied Physics Letters 33 (1978) 287-289 [in2p3-00018025 - version 1]

Interface studies of metal-semiconductor contacts by means of SIMs nuclear reaction and RBS Ponpon J.P., Grob J.J., Grob A., Stuck R., Siffert P. Dans Nuclear Instruments and Methods - International Conference on Ion Beam Analysis 3, États-Unis [in2p3-00018024 - version 1]

Energy loss and straggling of heavy ions by nuclear interactions in silicon Grob A., Grob J.J., Siffert P. Nuclear Instruments and Methods 132 (1976) 273-279 [in2p3-00018416 - version 1]