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7173 documents classés par : Date Titre Nom du premier auteur Type de documents Date de dépôt

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Study of the reaction Li(d,$\gamma$)Be at Ed = 361 keV Schaeffer M., Suffert M., Magnac-Valette D. Nuclear Physics A 175 (1971) 217-224 [in2p3-00018897 - version 1]

Intermolecular energy transfer from excited Born-Oppenheimer states of polyatomic molecules Voltz R. Chemical Physics Letters 11 (1971) 208-212 [in2p3-00018815 - version 1]

A study of 10 GeV/c K$^+$-nucleus coherent interactions and the Q$^+$-nucleon cross-section Haguenauer M., Nguyen-Khac U., Michael W., Mine P., Haatuft A. et al Physics Letters B 34 (1971) 219-222 [in2p3-00018802 - version 1]

Coherent production of 3 charged pions analysed by means of the longitudinal phase space plot Arnold R., Escoubes B., Kurtz N., Lloret A., Paty M. et al Physics Letters B 36 (1971) 261-265 [in2p3-00018801 - version 1]

A study of the charge exchange process K$^+$n to K$^0$p at 10 GeV/c Haguenauer M., Mine P., Nguyen-Khac U., Bjornenak K., Haatuft A. et al Physics Letters B 37 (1971) 538-540 [in2p3-00018800 - version 1]

Magnetic parameters for transitions from the first excited states in $^(175)$Lu, $^(167)$Er and $^(173)$Yb Dar Y., Gerber J., Macher A., Vivien J.P. Nuclear Physics A 171 (1971) 575-583 [in2p3-00018749 - version 1]

A new version of the microwave method Dar Y., Gerber J., Macher A., Vivien J.P. Nuclear Instruments and Methods 97 (1971) 251-262 [in2p3-00018748 - version 1]

Study by gamma-ray spectroscopy of the optimal conditions to produce thin films of TiO$_2$ by refractive cathode sputtering Laville-Saint-Martin B., Sens J.C. Nouvelle Revue d'Optique Appliquée 2 (1971) 63-37 [in2p3-00018735 - version 1]

Determination of the parity of the 4.19 MeV level of $^(36)$S Jundt F., Aslanides E., Gallmann A., Alburger D.E. Nuclear Physics A 166 (1971) 266-270 [in2p3-00018681 - version 1]

Levels of S$^(36)$ from S$^(34)$(t,p)S$^(36)$ Olness J.W., Harris W.R., Gallmann A., Jundt F., Alburger D.E. et al Physical Review C 3 (1971) 2323-2344 [in2p3-00018680 - version 1]

$\beta^+$ decay of $^(25)$Al Jundt F., Aslanides E., Fride B., Gallmann A. Nuclear Physics A 170 (1971) 12-16 [in2p3-00018679 - version 1]

Studies of the low-lying states of $^(41)$K via the reactions $^(41)$Ar($\beta^-)^(41)$K and $^(41)$K($p,p',\gamma)^(41)$K Jundt F., Aslanides E., Gallmann A., Warburton E.K. Physical Review C 4 (1971) 498-506 [in2p3-00018678 - version 1]

Study of the first excited states of $^(19)$O by angular correlations and mean lifetimes measurement Hibou F., Fintz P., Rastegar B., Gallmann A. Nuclear Physics A 171 (1971) 603-613 [in2p3-00018677 - version 1]

Fluorescence spectra of $^(3)$H-(1,2,4)thiadiazolo(4,3-a)pyridines, a chemically and photochemically stable heteroaromatic system Potts K.T., Richtol H.H., Armbruster R. Analytical Chemistry 43 (1971) 1304-1307 [in2p3-00018655 - version 1]

Study of $^(32)$S levels populated in the $^(28)$Si ($\alpha, \gamma)^(32)$S reaction Chevallier A., Bozek E., Pape A., Sens J.C., Armbruster R. et al Nuclear Physics A 176 (1971) 401-412 [in2p3-00018505 - version 1]

Low energy boron implantation profiles in silicon from junction depth measurements Sebillotte P., Badanoiu M., Ndocko-Ndongue V.B., Siffert P. Radiation Effects 7 (1971) 7-15 [in2p3-00018479 - version 1]

Results obtained atCRN Strasbourg on CdTe counters Cornet A., Hage-Ali M., Siffert P. Dans Proceedings of the international symposium on cadmium telluride a material for gamma-ray detectors (1971) 26- [in2p3-00018477 - version 1]

Time characteristics of coaxial Ge(Li) detectors Poenaru D.N., Stuck R., Siffert P. Revue Roumaine de Physique 16 (1971) 305-318 [in2p3-00018461 - version 1]

Behavior of high-purity germanium nuclear counters at low temperature Stuck R., Ponpon J.P., Siffert P., Ricaud C. Applied Physics Letters 19 (1971) 461-464 [in2p3-00018460 - version 1]

Boron implanted contacts on high purity germanium (application to nuclear counters) Ponpon J.P., Grob J.J., Stuck R., Burger P., Siffert P. Dans Proceedings of the 2nd International Conference on ion implantation in semiconductors, physics and technology, fundamental and applied aspects (1971) 420-429 [in2p3-00018425 - version 1]