s'authentifier
version française rss feed
.:. Consulter > Par thème arXiv > Physique .:.
7759 Documents classés par : 
Première Page Page Précédente ... 682 - 683 - 684 - 685 - 686 - 687 - 688 ... Page Suivante Page Finale
SPEG: An energy loss spectrometer for GANIL
Bianchi L., Fernandez B., Gastebois J., Gillibert A., Mittig W. et al
Nuclear Instruments and Methods in Physics Research Research: Accelerators, Spectrometers, Detectors and Associated Equipment 276 (1989) 509-520 [in2p3-00408215 - version 1]
fulltext access Fonctionnement & Etudes machine
Bex L.
Research report (1989) [in2p3-00380430 - version 1]
fulltext access Aide mémoire pour le calcul de la matrice radiale au premier ordre par la méthode vectorielle
Fermé J.
Research report (1989) 1-35 [in2p3-00356230 - version 1]
The ECLine-driver: a flexible, 20 MHz, 256 words ECLine generator
Chollet F., Degré A., Lacotte J.C., Lecoq J.
Nuclear Instruments and Methods in Physics Research Research: Accelerators, Spectrometers, Detectors and Associated Equipment 277 (1989) 497-500 [in2p3-00024157 - version 1]
Positron annihilation studies in solid lanthanides trisdipivaloylmethanates mod Ln(dpm)$_$ mod
Marques Netto A., Silva M.E.S.R., Machado J.C., Maximo Bicalho S.M.C., Abbe J.C. et al
Dans Positron annihilation - Positron Annihilation, Belgique [in2p3-00009463 - version 1]
Size of voids in polyethylene
Abbe J.C., Duplatre G., Serna J.
Dans Positron annihilation - Positron annihilation, Belgique [in2p3-00009462 - version 1]
Application of positron annihilation lifetime spectroscopy to a study of N-benzoyl-N-phenyl hydroxylamine associations in solution
Machado J.C., Magalhaes W.F., Marques Netto A., Abbe J.C., Duplatre G.
Chemical Physics Letters 163 (1989) 140-144 [in2p3-00009461 - version 1]
Inhomogeneous defect activation by rapid thermal processes in silicon
Thong-Quat V., Eichhammer W., Siffert P.
Applied Physics Letters 54 (1989) 1235-1237 [in2p3-00019454 - version 1]
Activation and gettering of intrinsic metallic impurities during rapid thermal processing
Hartiti B., Eichhammer W., Muller J.C., Siffert P.
Materials Science and Engineering B4 (1989) 129-132 [in2p3-00019450 - version 1]
On the origin of rapid thermal process induced recombination centers in silicon
Eichhammmer W., Quat V.-T., Siffert P.
Journal of Applied Physics 66 (1989) 3857-3865 [in2p3-00019449 - version 1]