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Fluctuation properties of nuclear energy levels and widths: comparison of theory with experiment.
Bohigas O., Haq R.U., Pandey A.
Dans Nuclear Data For Science And Technology - International Conference On Nuclear Data For Science And Technology, Belgique [in2p3-00009499 - version 1]
Comment on the positron reactions with pseudo-halides in water
Abbe J.C., Duplatre G., Mogensen O.E., Pedersen N.J., Andersen J.R.
Chemical Physics Letters 98 (1983) 403-407 [in2p3-00009472 - version 1]
Thermal treatment of Si(Sb) detectors
Glowacka L., Jaskola M., Sochacka R., Wielunski M., Dalmas J.
Nuclear Instruments and Methods in Physics Research Research 216 (1983) 303-305 [in2p3-00019553 - version 1]
Production of Kr and Xe isotopes by interaction of $^(197)$Au with 0.15-24 GeV protons
Sauvageon H., Regnier S., Simonoff G.N.
Zeitschrift für Physik A 314 (1983) 181-190 [in2p3-00019535 - version 1]
Recoil ranges of fragments of mass $\approx$ 30--40 formed by interaction of high energy protons with thorium and uranium
Sauvageon H., Lagarde-Simonoff M., Simonoff G.N.
Physical Review C 27 (1983) 296-298 [in2p3-00019531 - version 1]
La mise en route de GANIL et son programme expirimental
Doubre H.
Dans Troisiemes journees d'etude SATURNE - Saturne Meeting. 3, France [in2p3-00009383 - version 1]
X-ray study of the deep inelastic reactions 1160-MeV $^(136)$Xe + Pb and $^(136)$Xe + $^(232)$Th
Stoller C., Chemin J.F., Anholt R., Meyerhof W.E., Woelfli W.
Zeitschrift für Physik A 310 (1983) 9-18 [in2p3-00022375 - version 1]
$\bar pp$ elastic scattering at 30 GeV/c incident momentum in the momentum transfer range 0.5$<-t<$5.8(GeV/c)$^2$
Asa'D Z., Coupland M., Davis D.G., Duff B.G., Fearnley T. et al
Physics Letters B 130 (1983) 335-339 [in2p3-00009360 - version 1]
Search for correlations between electrical characteristics and stoichiometry in mercuric iodide
Tadjine A., Gosselin D., Koebel J.M., Siffert P.
Nuclear Instruments and Methods in Physics Research Research 213 (1983) 77-82 [in2p3-00019478 - version 1]
Deep levels subsisting in ion implanted silicon after various transient thermal annealing procedures
Mesli A., Muller J.C., Siffert P.
Applied Physics A: Materials Science and Processing A31 (1983) 147-152 [in2p3-00019477 - version 1]