Amorphous semiconductor thin films characterization by nuclear microanalysis

J. P. Thomas; M. Fallavier; J. M. Mackowski; Christophe Pijolat; J. Tousset; M. Wehr

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Journal of Radioanalytical Chemistry 55, 2 (1980) 427-443

Amorphous semiconductor thin films characterization by nuclear microanalysis

J. P. Thomas¹, M. Fallavier¹, J. M. Mackowski^{2, 3, 4}, Christophe Pijolat^{2, 3, 4}, J. Tousset¹, M. Wehr¹

Institut de Physique Nucléaire (et IN2P3), Université Lyon-1 43, Bd du 11 Novembre 1918, 69622 Villeurbanne Cedex (France) Collaboration(s)

(1980)

A review is presented summarizing the specific nuclear microanalysis methods applied in our laboratory to study amorphous semiconductor thin films. For backscattering, ~3 MeV Li ions are applicable when depth resolution and sensitivity are required while up to 8 MeV a-particles allow larger depths to be probed and elemental interferences to be solved. These features are predominant for diffusion studies between metal electrodes and chalcogenide films. On the other hand hydrogen profiling using the 1H(1SN, ~7) resonant nuclear reactions is described and analytical problems associated with its use are discussed. Applications to the elaboration conditions of hydrogenated (a)Si is developed.

1 :	IPNL - Institut de Physique Nucléaire de Lyon

2 :	LPMG-EMSE - Laboratoire des Procédés en Milieux Granulaires

3 :	SPIN-ENSMSE - Centre Sciences des Processus Industriels et Naturels

4 :	MICC-ENSMSE - Département Microsystèmes, Instrumentation et Capteurs Chimiques

domaine

Sciences de l'ingénieur/Génie des procédés


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