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Amorphous semiconductor thin films characterization by nuclear microanalysis
Thomas J.-P., Fallavier M., Mackowski J.-M., Pijolat C., Tousset J. et al
Journal of Radioanalytical Chemistry 55, 2 (1980) 427-443 - http://hal-emse.ccsd.cnrs.fr/emse-00436105
Sciences de l'ingénieur/Génie des procédés
Amorphous semiconductor thin films characterization by nuclear microanalysis
Jean-Paul Thomas1, Mireille Fallavier1, Jean-Marie Mackowski1, 2, Christophe Pijolat ()1, Jean Tousset1, Muryel Wehr1
1 :  IPNL - Institut de Physique Nucléaire de Lyon
CNRS : UMR5822 – IN2P3 – Université Claude Bernard - Lyon I (UCBL)
2 :  LMA - Laboratoire des matériaux avancés
CNRS : USR3264 – IN2P3 – Université Claude Bernard - Lyon I (UCBL)
Bâtiment 213 VIRGO 22 7 avenue Pierre de Coubertin 69622 VILLEURBANNE CEDEX
A review is presented summarizing the specific nuclear microanalysis methods applied in our laboratory to study amorphous semiconductor thin films. For backscattering, ~3 MeV Li ions are applicable when depth resolution and sensitivity are required while up to 8 MeV a-particles allow larger depths to be probed and elemental interferences to be solved. These features are predominant for diffusion studies between metal electrodes and chalcogenide films. On the other hand hydrogen profiling using the 1H(15N, αγ) resonant nuclear reactions is described and analytical problems associated with its use are discussed. Applications to the elaboration conditions of hydrogenated (a)Si is developed.

Journal of Radioanalytical Chemistry (J. Radioanal. Chem.)
Publisher Springer-Verlag
ISSN 0134-0719 (eISSN : 1588-2780)
Articles dans des revues avec comité de lecture

Amorphous semiconductor thin films – nuclear microanalysis – diffusion – metal electrodes – chalcogenide films.

Institut de Physique Nucléaire de Lyon ; Institut National de Physique Nucléaire et de Physique des Particules
ATP Matériaux 2726 ; ATP Photovoltaïque A651 3865 et CEA DAM No 1350