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Method and system for three-dimensional detection of objects using Thz radiation
Roskos H., Lisauskas A., Löffler T., Knap W., Coquillat D. et al
(18/03/2010) WO2010028972 - - http://hal.archives-ouvertes.fr/hal-00391711
Physique/Physique/Physique Générale
Method and system for three-dimensional detection of objects using Thz radiation
Hartmut Roskos, Alvydas Lisauskas, Torsten Löffler, Wojciech Knap1, Dominique Coquillat1, Frédéric Teppe1, Michel Dyakonov2
1 :  GES - Groupe d'étude des semiconducteurs
http://www.ges.univ-montp2.fr/
CNRS : UMR5650 – Université Montpellier II - Sciences et techniques
RPE - N.21 - CC074 Place Eugène Bataillon 34095 MONTPELLIER CEDEX 5
France
2 :  LPTA - Laboratoire de Physique Théorique et Astroparticules
http://www.lpta.in2p3.fr/
CNRS : UMR5207 – IN2P3 – Université Montpellier II - Sciences et techniques
Bât 13- 1er Et. - CC 070 Place Eugène Bataillon 34095 MONTPELLIER CEDEX 5
France
For optical frequencies, there are systems known from the prior art which not only make it possible to represent an object two-dimensionally, but also detect it three-dimensionally, in other words to determine the distance between the object and the detector for individual pixels. In contrast, the object of the present invention is to provide a system and a method for detecting an object three-dimensionally using high-frequency electromagnetic radiation at a frequency in a range of 100 GHz to 10 THz. According to the invention, this object is met by a system for detecting an object three-dimensionally using high-frequency electromagnetic radiation, the system comprising a radiation source for radiating high frequency radiation at a frequency in a range of 100 GHz to 10 THz, a receiver for detecting the high frequency radiation emitted from the radiation source, said receiver comprising an antenna element and a field effect transistor for mixing the high frequency radiation emitted by the radiation source with a local oscillator signal, wherein the field effect transistor comprises a source, a drain and a gate, and comprising a signal source for generating an electric modulation signal, wherein the signal source is connected to the radiation source in such a way that the high frequency radiation can be modulated by the modulation signal, and wherein the signal source is connected to the gate of the field effect transistor in such a way that the sensitivity of the field effect transistor can be modulated using a local oscillator signal coupled at a fixed phase to the modulation signal.
Allemand

WO2010028972
Brevets
18/03/2010

Terahertz – detection – transistor – imaging