| Domaine : |
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Sciences de l'ingénieur/Génie des procédés
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| Titre : |
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Ultra-smooth single crystal diamond surfaces resulting from implantation and lift-off processes |
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| Auteur(s) : |
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Thu Nhi Tran Thi1, Bruno Fernandez1, David Eon ( )1, Etienne Gheeraert ()1, Juergen Haertwig ()2, T. Lafford2, A. Perrat-Mabilon3, C. Peaucelle3, P. Olivero4, Etienne Bustarret ()1 |
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| Laboratoire : |
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| équipe(s) de recherche : |
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NanoFab
SC2G |
| Résumé : |
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A method for obtaining a smooth, single crystal diamond surface is presented, whereby a sacrificial defective layer is created by implantation of a regular (4 nm roughness) Ib diamond plate. This was then graphitized by annealing before being selectively etched. We have used O(+) at 240 keV, the main process variables being the ion fluence (ranging from 3 x 10(15) to 3 x 10(17)cm(-2)) and the final etching process (wet etch, H(2) plasma, and annealing in air). The substrates were characterized by atomic force microscopy, optical profilometry and white beam X-ray topography. The influence of the various process parameters on the resulting lift-off efficiency and final surface roughness is discussed. An O(+) fluence of 2 x 10(17)cm(-2) was found to result in sub-nanometer roughness over tens of mu m(2). |
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Langue du texte
intégral : |
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Anglais |
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| Journal : |
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PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE |
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| Audience : |
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internationale |
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| Type de publication : |
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Articles dans des revues avec comité de lecture |
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| Date de publication : |
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09/2011 |
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| Volume : |
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208 |
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| Numéro : |
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9 |
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| Page, identifiant, ... : |
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2057-2061 |
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