HAL : in2p3-00000590, version 1
 Materials Letters 61 (2007) 2855-2858
 Formation of the crystalline $\beta$-C$_3$N$_4$ phase by dual ion beam sputtering deposition
 J.P. Riviere1, D. Texier1, J. Delafond1, M. Jaouen1, E.L. Mathe1, J. Chaumont2
 (2007)
 Preliminary investigations suggest that a crystalline carbon nitride compound corresponding to the new β-C3N4 phase can be syntasized by a dual ion beam sputtering deposition technique. Two Kaufman ion sources have been used, one for sputtering a graphite target with 1.2 keV Ar+ ions and a second one for bombarding the growing film with a 600 eV nitrogen ions beam at a temperature of 400 °C. Rutherford backscattering (RBS) analysis shows that the nitrogen content is very close to the value expected for the β-C3N4 compound. The density of the films measured by X-ray reflectometry is found to be about 3.4 compared with a theoretical value of 3.47. The microstructural state of the films has been investigated by transmission electron microscopy (TEM) and our results indicate that the films are mainly formed of small crystallized grains of 50–100 nm although the presence of a second amorphous phase is also observed. The electron diffraction patterns are in good agreement with those predicted theoretically for the new β-C3N4 phase.
 Thème(s) : Physique/Physique/Instrumentations et Détecteurs
 in2p3-00000590, version 1 http://hal.in2p3.fr/in2p3-00000590 oai:hal.in2p3.fr:in2p3-00000590 Contributeur : Jocelyne Lorgeril <> Soumis le : Jeudi 25 Février 1999, 16:27:00 Dernière modification le : Jeudi 26 Juillet 2007, 13:55:32