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| HAL : in2p3-00019455, version 1 |
| Fiche détaillée |  Récupérer au format |
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| Materials Science and Engineering B2 (1989) 105-110 |
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| Electron properties of defects created by 1.6 GeV argon ions in silicon |
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| J. KrynickiM. ToulemondeJ.C. Muller1P. Siffert1 |
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| (1989) |
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| 1 : | IReS - Institut de Recherches Subatomiques |
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| in2p3-00019455, version 1 | |
| http://hal.in2p3.fr/in2p3-00019455 | |
| oai:hal.in2p3.fr:in2p3-00019455 | |
| Contributeur : Yvette Heyd | |
| Soumis le : Mercredi 30 Mai 2001, 14:02:37 | |
| Dernière modification le : Mercredi 30 Mai 2001, 14:02:37 | |
