HAL : in2p3-00115973, version 1
 E-MRS IUMRS ICEM 2006 Spring Meeting - Symposium U: Si-based Materials for Advanced Microelectronic Devices: Synthesis, Defects and Diffusion, Nice : France
 Structural and nuclear characterizations of defects created by noble gas implantation in silicon oxide
 H. Assaf1, E. Ntsoenzok1, 2, M.-F. Barthe1, M.-O. Ruault3, T. Sauvage1, S. Ashok4
 (2006)
 Thermally grown silicon oxide layer was implanted at room temperature with 300keV Xe at fluences ranging from 0.5 to 5x10$^16$Xe/cm$^2$. Bubbles created after Xe-implantation provided a low-k silicon oxide that has potential use as a dielectric material for interconnects in Si integrated circuits. Transmission Electron Microscopy (TEM), Rutherford Backscattering Spectrometry (RBS) and Positron Annihilation Spectroscopy (PAS) were used to provide a comprehensive characterization of defects (bubbles, vacancy, gas atoms and other types of defects) created by Xe implantation in $SiO_2$ layer. These measurements suggest that the bubbles observed with TEM for all fluences were a consequence of the interaction between Xe and vacancies (V), with $V_nXe_m$ complexes created in the zone where V and Xe profiles overlap. Negatively charged defects such as ($Si-O^-$, $Si-O-O^-$ and $O_2^-$) are also created after implantation.
 Thème(s) : Chimie/CristallographiePhysique/Matière Condensée/Autre
 Mot(s)-clé(s) : Low-k SiO2 – Defects – Bubbles – Xe implantation – Positron annihilation spectroscopy – Rutherford Backscattering – Transmission electron microscopy
Liste des fichiers attachés à ce document :
 PDF
 e-MRS-ASSAF_Hanan.pdf(3 MB)
 in2p3-00115973, version 1 http://hal.in2p3.fr/in2p3-00115973 oai:hal.in2p3.fr:in2p3-00115973 Contributeur : Dominique Girod <> Soumis le : Vendredi 24 Novembre 2006, 12:00:41 Dernière modification le : Mercredi 29 Novembre 2006, 13:13:13