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Structural and nuclear characterizations of defects created by noble gas implantation in silicon oxide
Assaf H., Ntsoenzok E., Barthe M.-F., Ruault M.-O., Sauvage T. et al
Dans Nuclear Instruments and Methods in Physics Research B - E-MRS IUMRS ICEM 2006 Spring Meeting - Symposium U: Si-based Materials for Advanced Microelectronic Devices: Synthesis, Defects and Diffusion, Nice : France - http://hal.in2p3.fr/in2p3-00115973
Chimie/Cristallographie
Physique/Matière Condensée/Autre
Structural and nuclear characterizations of defects created by noble gas implantation in silicon oxide
H. Assaf1, E. Ntsoenzok1, 2, M.-F. Barthe1, M.-O. Ruault3, T. Sauvage1, S. Ashok4
1 :  CERI - Centre d'Études et de Recherches par Irradiation
http:///web.cnrs-orleans.fr/~ceri
CNRS : UPR33
3A, rue de la Férollerie 45071 ORLEANS cedex 2
France
2 :  LESI - Laboratoire d' Électronique, Signaux, Images
http://www.univ-orleans.fr/lesi/
Université d'Orléans – Institut Universitaire de Technologie de Chartres – Ecole Polytechnique de l'Université d'Orléans
21 rue de Loigny la bataille 28000 Chartres
France
3 :  CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
http://www-csnsm.in2p3.fr/
CNRS : UMR8609 – IN2P3 – Université Paris XI - Paris Sud
batiments 104 et 108 - 91405 Orsay Campus
France
4 :  DEPARTMENT OF ENGINEERING SCIENCE - Department of Engineering Science
The Pennsylvania State University
212 Earth and Engineering Science Building University Park PA 16802
États-Unis
Thermally grown silicon oxide layer was implanted at room temperature with 300keV Xe at fluences ranging from 0.5 to 5x10$^16$Xe/cm$^2$. Bubbles created after Xe-implantation provided a low-k silicon oxide that has potential use as a dielectric material for interconnects in Si integrated circuits. Transmission Electron Microscopy (TEM), Rutherford Backscattering Spectrometry (RBS) and Positron Annihilation Spectroscopy (PAS) were used to provide a comprehensive characterization of defects (bubbles, vacancy, gas atoms and other types of defects) created by Xe implantation in $SiO_2$ layer. These measurements suggest that the bubbles observed with TEM for all fluences were a consequence of the interaction between Xe and vacancies (V), with $V_nXe_m$ complexes created in the zone where V and Xe profiles overlap. Negatively charged defects such as ($Si-O^-$, $Si-O-O^-$ and $O_2^-$) are also created after implantation.

Communications avec actes
2006
Nuclear Instruments and Methods in Physics Research B
253
Enrico Napolitani, Andrej Kuznetsov, Wolfgang Skorupa and Majeed Foad
222-226

E-MRS IUMRS ICEM 2006 Spring Meeting - Symposium U: Si-based Materials for Advanced Microelectronic Devices: Synthesis, Defects and Diffusion
Nice
France
29/05/2006
02/06/2006

77.55.+f; 78.55.Mb; 78.66.Nk; 61.72.Ji; 61.72.Qq; 61.80.Jh; 71.60.+z
Low-k SiO2 – Defects – Bubbles – Xe implantation – Positron annihilation spectroscopy – Rutherford Backscattering – Transmission electron microscopy
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