| Thème(s) : |
 |
|
|
| Titre : |
|
Structural and nuclear characterizations of defects created by noble gas implantation in silicon oxide |
|
| Auteur : |
|
H. Assaf1, E. Ntsoenzok1, 2, M.-F. Barthe1, M.-O. Ruault3, T. Sauvage1, S. Ashok4 |
|
| Laboratoire : |
|
|
|
| Résumé : |
|
Thermally grown silicon oxide layer was implanted at room temperature with 300keV Xe at fluences ranging from 0.5 to 5x10$^16$Xe/cm$^2$. Bubbles created after Xe-implantation provided a low-k silicon oxide that has potential use as a dielectric material for interconnects in Si integrated circuits. Transmission Electron Microscopy (TEM), Rutherford Backscattering Spectrometry (RBS) and Positron Annihilation Spectroscopy (PAS) were used to provide a comprehensive characterization of defects (bubbles, vacancy, gas atoms and other types of defects) created by Xe implantation in $SiO_2$ layer. These measurements suggest that the bubbles observed with TEM for all fluences were a consequence of the interaction between Xe and vacancies (V), with $V_nXe_m$ complexes created in the zone where V and Xe profiles overlap. Negatively charged defects such as ($Si-O^-$, $Si-O-O^-$ and $O_2^-$) are also created after implantation. |
|
|
| Type de publication : |
|
Communications avec actes |
|
Date de publication
ou d'écriture : |
|
2006 |
|
Nom du périodique
Titre de l'ouvrage : |
|
Nuclear Instruments and Methods in Physics Research B |
|
| Volume : |
|
253 |
|
| Editeurs scientifiques : |
|
Enrico Napolitani, Andrej Kuznetsov, Wolfgang Skorupa and Majeed Foad |
|
| Page/Article : |
|
222-226 |
|
|
| Nom du colloque : |
|
E-MRS IUMRS ICEM 2006 Spring Meeting - Symposium U: Si-based Materials for Advanced Microelectronic Devices: Synthesis, Defects and Diffusion |
|
| Ville du colloque : |
|
Nice |
|
| Pays du colloque : |
|
France |
|
| Date du colloque (début) : |
|
29/05/2006 |
|
| Date du colloque (fin) : |
|
02/06/2006 |
|
|
| Classification PACS : |
|
77.55.+f; 78.55.Mb; 78.66.Nk; 61.72.Ji; 61.72.Qq; 61.80.Jh; 71.60.+z |
|
| Mot(s)-clé(s) : |
|
Low-k SiO2 – Defects – Bubbles – Xe implantation – Positron annihilation spectroscopy – Rutherford Backscattering – Transmission electron microscopy |
|
Récupérer au format
