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HAL : in2p3-00170330, version 1

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15th International Conference on Ion Beam Modification of Materials, Taormina : Italie (2006)
High energy N+ ion implantation in 4H–SiC
Erwan Oliviero1, Mihai Lazar1, A. Gardon2, C. Peaucelle2, A. Perrat2, J.J. Grob3, Christophe Raynaud1, Dominique Planson1

Box profiles were formed in 4H–SiC epilayers by different combination of multi-energy N+ ion implantations at room temperature, with energy ranges varying from [0.5–2 MeV] to [0.4–4 MeV]. The fluences were adjusted in order to keep a constant plateau concentration between 2 and 3 × 1018 cm−3. Post-implantation annealing were performed at 1650 or 1800 °C up to 45 min in ultra-pure argon atmosphere, to activate the dopants. During this process, some samples were encapsulated with a graphite (C) cap obtained by thermal conversion of a spin-coated AZ5214E photoresist. Both as-implanted and annealed samples were analyzed by Rutherford Backscattering Spectroscopy in channeling mode (RBS/C) with 3.5 MeV He+ beam to quantify the induced damage. Dopant profiles were obtained by Secondary Ion Mass Spectroscopy (SIMS) measurements and compared to Monte–Carlo (MC) simulation.
1 :  Ampère
2 :  IPNL - Institut de Physique Nucléaire de Lyon
3 :  InESS - Institut d'Electronique du Solide et des Systèmes
Silicon carbide – Ion implantation – Dopants – High energy – Nitrogen