s'authentifier
version française rss feed
HAL : in2p3-00693226, version 1

Fiche détaillée  Récupérer au format
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 275 (2012) 41-57
Isotopic fractionation of silicon negative ions sputtered from minerals by Cs+ bombardment
G. Slodzian1, C. Engrand1, J. Duprat1
(2012)

Negative silicon ions sputtered from a set of olivines under Cs bombardment show useful yield UY variations depending on sample compositions. Those matrix effects are correlated with atomic concentrations of implanted cesium close to surface, which in turn depend on sputtering yields. It is shown that instrumental mass fractionations IMF on isotopes are depending on UY. A linear relationship between IMF and the inverse of Af, the Cs atomic fraction, is experimentally established for Si as well as a linear dependence of UY on Af. A model linking the two sets of experimental data is proposed. Measurement artefacts are reviewed. (C) 2011 Elsevier B.V. All rights reserved.
1 :  CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
CSNSM AS
Physique/Astrophysique/Planétologie et astrophysique de la terre

Planète et Univers/Astrophysique/Planétologie et astrophysique de la terre
Isotopic fractionation – Negative sputtered ions – MASS-SPECTROMETRY – OXYGEN ISOTOPES – SULFUR ISOTOPES – SIMS – EMISSION – IMPLANTATION – INSULATORS – DEPENDENCE