| Thème(s) : |
 |
Planète et Univers/Sciences de la Terre/Minéralogie
|
|
| Titre : |
|
Recrystallization of amorphous ion implanted silicon carbide after thermal annealing |
|
| Auteur : |
|
S. Miro1, J.-M. Costantini1, S. Sorieul2, L. Gosmain1, L. Thomé3 |
|
| Laboratoire : |
|
|
|
| équipe(s) de recherche : |
|
INSTRU
CSNSM PCI |
| Résumé : |
|
Single crystals of 6H-SiC were implanted at room temperature with 4-MeV Au ions to a fluence of 1015cm 2. Raman spectra showed that full amorphization was achieved. The recrystallization process was studied by micro-Raman spectrometry after isochronal thermal annealing between 700 and 1500 C. The spectra permitted the evolution upon annealing of Si-C bonds, and also of Si-Si and C-C bonds, to be followed. Amorphous phase relaxation takes place below 700 C; then recrystallization of the 6H polytype sets in at 700 C. At 900 C crystallites with different crystalline states are formed. Moreover, Raman spectra provide evidence of graphitic nanocluster formation at 1500 C. |
|
|
| Type de publication : |
|
Articles dans des revues avec comité de lecture |
|
Date de publication
ou d'écriture : |
|
2012 |
|
| Nom du périodique : |
|
| Philosophical Magazine Letters (Philos. Mag. Lett.) |
| Publisher |
Taylor & Francis: STM, Behavioural Science and Public Health Titles |
| ISSN |
0950-0839 (eISSN : 1362-3036) |
|
|
| Volume : |
|
92 |
|
| Page/Article : |
|
633-639 |
|
|
| Identifiant local : |
|
CSNSM PCI |
|
| Mot(s)-clé(s) : |
|
SiC – Raman spectroscopy – recrystallization – irradiation effects |
|
Récupérer au format
