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| HAL : jpa-00220800, version 1 |
| DOI : 10.1051/jphyscol:19814175 |
| Fiche détaillée |  Récupérer au format |
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| Ninth International Conference on Amorphous and Liquid Semiconductors, Grenoble : France (1981) |
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| INTERACTION BETWEEN ARGON AND DOPANTS IN SPUTTERED a-Si : H |
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| M. Toulemonde1J. Grob1J. Bruyère1A. DeneuvilleH. Hamdi1P. Siffert1 |
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| (1981) |
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| The concentrations of As, B, H, Ar and Si in sputtered a-Si : H are measured by helium Rutherford backscattering and nuclear reactions analysis. Excess or deficit of hydrogen and argon by comparison with intrinsic a-Si : H are found in presence of dopants at high deposition rate. This is related to the plasma deposition method and would suggest micro grain structure in the deposited layer. |
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| 1 : | IReS - Institut de Recherches Subatomiques |
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| Domaine | : | Physique/Articles anciens |
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| Liste des fichiers attachés à ce document : | |||||
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| jpa-00220800, version 1 | |
| http://hal.archives-ouvertes.fr/jpa-00220800 | |
| oai:hal.archives-ouvertes.fr:jpa-00220800 | |
| Contributeur : Archives Journal de Physique | |
| Soumis le : Jeudi 1 Janvier 1981, 08:00:00 | |
| Dernière modification le : Lundi 31 Mars 2008, 14:31:20 | |
