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Ninth International Conference on Amorphous and Liquid Semiconductors, Grenoble : France (1981)
INTERACTION BETWEEN ARGON AND DOPANTS IN SPUTTERED a-Si : H
M. Toulemonde1, J. Grob1, J. Bruyère1, A. Deneuville, H. Hamdi1, P. Siffert1
(1981)

The concentrations of As, B, H, Ar and Si in sputtered a-Si : H are measured by helium Rutherford backscattering and nuclear reactions analysis. Excess or deficit of hydrogen and argon by comparison with intrinsic a-Si : H are found in presence of dopants at high deposition rate. This is related to the plasma deposition method and would suggest micro grain structure in the deposited layer.
1 :  IReS - Institut de Recherches Subatomiques
Physique/Articles anciens
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