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Laser-Solid Interactions and Transient Thermal Processing of Materials, Strasbourg : France (1983)
STUDY OF SOME OPTICAL AND ELECTRICAL PROPERTIES OF HEAVILY DOPED SILICON LAYERS
A. Slaoui1, E. Fogarassy1, J. Muller1, P. Siffert1
(1983)

It is well known that the solubility of most dopants can be noticeably increased in silicon by pulsed laser annealing of the implanted layers. Here, we have investigated the evolution of some optical and electrical properties of such heavily doped layers as a function of implanted dose, trying to separate effects due to the high doping from those resulting from defects or precipitates. P-type silicon wafers have been implanted with 80 KeV arsenic ions at doses of up to 1017 cm-2 and annealed by a pulsed ruby and YAG laser, giving pulses of 20 and 100 ns duration, respectively and depositing energies up to 2.5 J.cm-2. U.V. and visible light (250 and 500 nm) reflectance, as well as ellipsometry (632.8 nm) measurements have been performed as well as dark I - V and C - V characteristics. These investigations indicate that by increasing the implanted dose, the doping level first increases until near surface defects and precipitates modify the optical as well as the electrical properties of the heavily doped layers. The generation of these defects has been followed by RBS in random and channelling conditions.
1 :  IReS - Institut de Recherches Subatomiques
Physique/Articles anciens

Physique/Physique/Instrumentations et Détecteurs
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