HAL : jpa-00223132, version 1

DOI : 10.1051/jphyscol:1983546

Fiche détaillée

Récupérer au format BibTeX - EndNote - TEI - RefWorks -

Laser-Solid Interactions and Transient Thermal Processing of Materials, Strasbourg : France (1983)

ELECTRON SPIN RESONANCE INVESTIGATION OF THE EFFECTS OF THE H2+ IMPLANTATION AND DIFFUSION ONE THE LASER INDUCED DEFECTS IN VIRGIN SILICON

A. Goltzene, B. Meyer, C. Schwab, J.C. Muller1, P. Siffert1

(1983)

Electron paramagnetic resonance of the defects induced by laser annealing at high power density (2 J/cm-2) has been investigated in virgin FZ semi-insulating Silicon. A further H2+ implantation and diffusion is inactive on the signal observed at gx = 2.0055 ± 0.0005. This is consistent with the attribution of X to the dangling bonds, created by the mechanical stresses during the thermal shock, as they are not passivated by molecular hydrogen.

1 :	IReS - Institut de Recherches Subatomiques

Domaine

:

Physique/Articles anciens Physique/Physique/Instrumentations et Détecteurs

jpa-00223132, version 1

http://hal.archives-ouvertes.fr/jpa-00223132

oai:hal.archives-ouvertes.fr:jpa-00223132

Contributeur : Archives Journal de Physique <>

Soumis le : Samedi 1 Janvier 1983, 08:00:00

Dernière modification le : Jeudi 20 Mars 2008, 13:56:12