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Congress on Laser-Solid Interactions and Transient Thermal Processing of Materials, Strasbourg : France (1983)
FABRICATION OF HIGH EFFICIENCY SILICON SOLAR CELLS BY LASER INDUCED DIFFUSION
E. Fogarassy1, P. Siffert1
(1983)

The diffusion of thin films (~ 50 Å) of antimony, deposited on single crystalline silicon, has been induced by irradiating the wafers with a high repetitive (5KHz) CW pumped YAG laser emitting at 0.53 micron wavelength pulses of 100 ns duration at an energy of 2 J/cm-2. The 100 microns in diameter spots are scanned over large areas with controlled pulse overlapping by a microprocessor set-up. The properties of the laser processed junctions have been analyzed and their photovoltaic characteristics determined under AM1 illumination conditions. The results demonstrate that the use of scanned overlapping laser pulses allows to prepare large area solar cells, which present efficiencies between 15 and 16%.
1 :  IReS - Institut de Recherches Subatomiques
Physique/Articles anciens
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