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Laser-Solid Interactions and Transient Thermal Processing of Materials, Strasbourg : France (1983)
PULSED AND CW LASER TREATMENTS OF IMPLANTED POLYSILICON SOLAR CELLS
J.C. Muller1, E. Courcelle1, S. Barthe1, P. Siffert1, J. Com-Nougué, E. Kerrand, C. Tessari
(1983)

Conventional ion implantation and unanalyzed ion bombardment have been used to elaborate the rectifying N+ contact of polycrystalline silicon (Wacker, HEM, CGE) solar cells. Two surface laser annealing in the liquid phase (Nd : YAG laser) and in the solid phase (CO2 laser) regimes have been used. The properties of the solar cells so processed have been investigated. For both doping procedures and both annealing techniques, the cells (conversion) efficiencies under AM1 illumination exceeded 11% for the various polysilicon substrates.
1 :  IReS - Institut de Recherches Subatomiques
Physique/Articles anciens

Physique/Physique/Instrumentations et Détecteurs
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