s'authentifier
version française rss feed
HAL : jpa-00223823, version 1

Fiche détaillée  Récupérer au format
10th International Congress on X-Ray Optics and Microanalysis, Toulouse : France (1983)
SPECIFIC CONTRIBUTIONS OF SIMS AND XPS TO STUDIES OF THERMAL OXIDE FILM
J.C. Pivin1, D. Loison
(1984)

SIMS give specific informations on the diffusion of a tracer in growing oxide films and the depth distribution of impurities in low concentrations in the films. The valency of these dopants can be determined by XPS, thus permitting to explain their influence on diffusion processes.
1 :  CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
Physique/Articles anciens
Liste des fichiers attachés à ce document : 
PDF
ajp-jphyscol198445C2151.pdf(622.3 KB)