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| HAL : jpa-00231294, version 1 |
| DOI : 10.1051/jphyslet:019760037011028700 |
| Fiche détaillée |  Récupérer au format |
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| Journal de Physique Lettres 37, 11 (1976) 287-289 |
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| Enhancement of the superconducting transition temperatures in ion-implanted aluminium alloys |
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| A.M. Lamoise1J. Chaumont1F. Lalu1F. Meunier2H. Bernas3 |
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| (1976) |
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| Random alloys of C, Si, and Ge with Al, prepared by ion implantation at liquid helium temperatures, have maximum superconducting transition temperatures Tc of 4.2 K (C), 7.35 K (Ge) and 8.35 K (Si). The latter value is the highest yet obtained for an Al-based alloy. All these values are obtained for covalent element concentrations of ∼ 25 %. The effect of lattice disorder is not found sufficient to account for the observed Tc enhancements. |
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| 1 : | CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse |
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| 2 : | LPS - Laboratoire de Physique des Solides |
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| 3 : | IPNO - Institut de Physique Nucléaire d'Orsay |
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| Domaine | : | Physique/Articles anciens Physique/Physique/Instrumentations et Détecteurs |
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| aluminium alloys – germanium alloys – ion implantation – silicon alloys – superconducting thin films – superconducting transition temperature – type II superconductors – superconducting transition temperatures – lattice disorder – ion implanted alloys – Al C alloy – Al Ge alloy – Al Si alloy |
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| Liste des fichiers attachés à ce document : | |||||
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| jpa-00231294, version 1 | |
| http://hal.archives-ouvertes.fr/jpa-00231294 | |
| oai:hal.archives-ouvertes.fr:jpa-00231294 | |
| Contributeur : Archives Journal de Physique | |
| Soumis le : Jeudi 1 Janvier 1976, 08:00:00 | |
| Dernière modification le : Mardi 4 Mars 2008, 10:30:56 | |
