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Characterization of undoped high resistivity CdTe grown by a THM method
Stuck R., Muller J.C., Siffert P.
Dans Revue de Physique Appliquee - International Symposium On Cadmium Telluride: Physical Properties And Applications 2, Strasbourg : France (1976) - http://hal.archives-ouvertes.fr/jpa-00244139
Physique/Articles anciens
Characterization of undoped high resistivity CdTe grown by a THM method
R. Stuck1, J.C. Muller1, P. Siffert1
1 :  IReS - Institut de Recherches Subatomiques
http://ireswww.in2p3.fr/
CNRS : UMR7500 – IN2P3 – Université Louis Pasteur - Strasbourg I – Cancéropôle du Grand Est
23 rue du Loess - BP 28 - 67037 Strasbourg Cedex 2
France
Using time of flight technique, it is shown that the level at E v + 0.15 eV, attributed generally to the association of a dopant impurity and a cadmium vacancy, is present in undoped materials. Several methods (TSC, SIMS, nuclear activation) have been used to investigate the nature of this impurity.
Anglais
1977

Revue de Physique Appliquee
Revue de Physique Appliquee
non spécifiée
Communications avec actes
1977
12
2
185-188

International Symposium On Cadmium Telluride: Physical Properties And Applications 2
1976
Strasbourg
France

cadmium compounds – crystal growth from melt – II VI semiconductors – impurity electron states – mass spectra – neutron activation analysis – semiconductor growth – thermally stimulated currents – time of flight spectra – undoped high resistivity CdTe – time of flight technique – nuclear activation – travelling heater method growth – impurity level – thermally stimulated current – secondary ion mass spectrometry – II VI semiconductor – carrier mobility

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