| Domaine : |
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Physique/Articles anciens
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| Titre : |
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Characterization of undoped high resistivity CdTe grown by a THM method |
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| Auteur(s) : |
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R. Stuck1, J.C. Muller1, P. Siffert1 |
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| Laboratoire : |
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| Résumé : |
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Using time of flight technique, it is shown that the level at E v + 0.15 eV, attributed generally to the association of a dopant impurity and a cadmium vacancy, is present in undoped materials. Several methods (TSC, SIMS, nuclear activation) have been used to investigate the nature of this impurity. |
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Langue du texte
intégral : |
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Anglais |
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Date de production,
écriture : |
|
1977 |
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| Journal : |
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Revue de Physique Appliquee |
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| Titre de l'ouvrage : |
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Revue de Physique Appliquee |
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| Audience : |
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non spécifiée |
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| Type de publication : |
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Communications avec actes |
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| Date de publication : |
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1977 |
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| Volume : |
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12 |
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| Numéro : |
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2 |
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| Page, identifiant, ... : |
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185-188 |
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| Titre de la conférence : |
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International Symposium On Cadmium Telluride: Physical Properties And Applications 2 |
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| Date de la conférence : |
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1976 |
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| Ville : |
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Strasbourg |
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| Pays : |
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France |
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| Mots Clés : |
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cadmium compounds – crystal growth from melt – II VI semiconductors – impurity electron states – mass spectra – neutron activation analysis – semiconductor growth – thermally stimulated currents – time of flight spectra – undoped high resistivity CdTe – time of flight technique – nuclear activation – travelling heater method growth – impurity level – thermally stimulated current – secondary ion mass spectrometry – II VI semiconductor – carrier mobility |
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