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| HAL : jpa-00244693, version 1 |
| DOI : 10.1051/rphysap:0198000150102100 |
| Fiche détaillée |  Récupérer au format |
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| Revue de Physique Appliquee 15, 1 (1980) 21-23 |
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| Electron spin and cyclotron resonance of laser annealed silicon |
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| A. GoltzenÉJ.C. Muller1C. SchwabP. Siffert1 |
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| (1980) |
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| EPR and cyclotron resonance investigations have been performed on laser annealed Si wafers, leading to the identification of the [V + O i]- complex in virgin Si and to a donor signal quenching in P-implanted Si. |
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| 1 : | IReS - Institut de Recherches Subatomiques |
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| Domaine | : | Physique/Articles anciens Physique/Physique Nucléaire Expérimentale |
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| annealing – elemental semiconductors – laser beam effects – paramagnetic resonance – silicon – cyclotron resonance – EPR – laser annealed Si wafers – donor signal quenching – electron spin – defects – deep levels – Si:P – elemental semiconductor |
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| Liste des fichiers attachés à ce document : | |||||
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| jpa-00244693, version 1 | |
| http://hal.archives-ouvertes.fr/jpa-00244693 | |
| oai:hal.archives-ouvertes.fr:jpa-00244693 | |
| Contributeur : Archives Journal de Physique | |
| Soumis le : Mardi 1 Janvier 1980, 08:00:00 | |
| Dernière modification le : Jeudi 27 Mars 2008, 14:53:55 | |
