HAL : jpa-00244909, version 1

DOI : 10.1051/rphysap:01981001604016500

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Revue de Physique Appliquee 16, 4 (1981) 165-172

Electrostatic analysis of backscattered heavy ions for semiconductor surface investigation

M. Hage-Ali1, P. Siffert1

(1981)

The capabilities of Rutherford backscattering in surface analysis are limited by the energy resolution of the solid state detectors and their rapid degradation for heavier projectiles. Here, we investigate the possibilities of an electrostatic analyser (ESA) detecting heavy projectiles (7Li+, 12C +) backscattered from various compound semiconductor surfaces, essentially with respect to mass and depth resolution.

1 :	IReS - Institut de Recherches Subatomiques

Domaine

:

Physique/Articles anciens Physique/Physique/Instrumentations et Détecteurs

Mots Clés : elemental semiconductors – particle backscattering – particle detectors – Schottky effect – silicon – surface structure – backscattered heavy ions – semiconductor surface investigation – Rutherford backscattering – surface analysis – energy resolution – solid state detectors – electrostatic analyser – heavy projectiles – sup 6 Li sup + – sup 12 C sup + – compound semiconductor surfaces – depth resolution – mass resolution – Si detectors

jpa-00244909, version 1

http://hal.archives-ouvertes.fr/jpa-00244909

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Contributeur : Archives Journal de Physique <>

Soumis le : Jeudi 1 Janvier 1981, 08:00:00

Dernière modification le : Jeudi 27 Mars 2008, 15:00:39