HAL: jpa-00231206, version 1

DOI: 10.1051/jphyslet:019750036011027100

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Journal de Physique Lettres 36, 11 (1975) 271-273

Superconducting properties of aluminium thin films after ion implantation at liquid helium temperatures

A.M. Lamoise1, J. Chaumont1, F. Meunier2, H. Bernas3

(1975)

Using a recent modification of the Orsay ion implantor, Al, O, He, H and D were implanted into Al thin films at temperatures below 6 K. The critical temperature Tc of the implanted films depends on the implanted ion dose and range distribution as well as on radiation damage effects. The higher limit of Tc ranges from 2.7 K to 4.1 K for Al, O and He implantations. It reaches 6.75 K for H, at an average concentration near AlH2.

1:	CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
2:	LPS - Laboratoire de Physique des Solides
3:	IPNO - Institut de Physique Nucléaire d'Orsay

Subject

:

Physics/Physics archives Physics/Physics/Instrumentation and Detectors

Keyword(s) : aluminium – ion implantation – superconducting materials – superconducting thin films – superconducting transition point – Al – O – He – H – D – critical temperature – Al thin films – liquid He temperatures – superconducting properties

jpa-00231206, version 1

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From: Archives Journal de Physique <>

Submitted on: Wednesday, 1 January 1975 08:00:00

Updated on: Tuesday, 4 March 2008 10:33:29