HAL : in2p3-00336302, version 1

DOI : 10.1109/TNS.2008.2001925

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IEEE Transactions on Nuclear Science 55 (2008) 2181-2187

SEGR Study on Power MOSFETs: Multiple Impacts Assumption

D. Peyre, Ch. Poivey, Ch. Binois, R. Mangeret, G. Salvaterra, D. Beaumel1, F. Pontoni, T. Bouchet, L. Pater, F. Bezerra, R. Ecoffet, E. Lorfèvre, F. Sturesson, G. Berger, J. C. Foy2, B. Piquet2

(2008)

This paper presents experimental data showing heavy ions inducing gate degradation in power MOSFETs. In the experiments, backside and front-side irradiations are performed. During backside irradiation, the heavy ion ranges are tuned in such way to control whether they hit the gate or not. Gate-to-source current Igss ( ) is measured versus heavy ions (H.I.) fluence . Post-irradiation- gate-stress-test (PGST) allows measurement of gate breakdown voltage VBD( ) which is observed to decrease with (H.I.) fluence. Based on these experimental results, a hypothesis of substrate- generated carriers impact overlap of multiple strikes may explain gate degradation until SEGR triggering. This last hypothesis is supported by a statistical model approach of heavy ions multiple impacts.

1 :	IPNO - Institut de Physique Nucléaire d'Orsay
2 :	GANIL - Grand Accélérateur National d'Ions Lourds

Thème(s)

:

Sciences de l'ingénieur/Electronique

Mot(s)-clé(s) : Cumulative phenomenon – heavy ions (H.I.) – multiple impacts – power MOSFET – post-irradiation-gate-stress-test (PGST) – single-event gate rupture (SEGR).

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Contributeur : Michel Lion <>

Soumis le : Lundi 3 Novembre 2008, 14:49:23

Dernière modification le : Lundi 8 Décembre 2008, 11:27:54