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Comparison of charged particle identification using pulse shape discrimination and ΔE−E methods between front and rear side injection in silicon detectors
Le Neindre N., Bougault R., Barlini S., Bonnet E., Borderie B. et al
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 701 (2013) 145-152 - http://hal.in2p3.fr/in2p3-00753651
Physique/Physique Nucléaire Expérimentale
Comparison of charged particle identification using pulse shape discrimination and ΔE−E methods between front and rear side injection in silicon detectors
N. Le Neindre1, R. Bougault1, S. Barlini, E. Bonnet, B. Borderie2, G. Casini, A. Chbihi3, P. Edelbruck2, J.D. Frankland3, D. Gruyer3, E. Legouée1, O. Lopez1, P. Marini3, M. Pârlog1, G. Pasquali, M. Petcu, M.F. Rivet2, F. Salomon, E. Vient1, R. Alba, G. Baiocco, L. Bardelli, M. Bini, R. Borcea, M. Bruno, S. Carboni, M. Cinausero, I. Cruceru, M. Degerlier, J.A. Dueñas, K. Ga¸sior, F. Gramegna, A. Grzeszczuk, M. Kamuda, T. Kozik, V. Kravchuk, I. Lombardo, C. Maiolino, T. Marchi, L. Morelli, F. Negoita, A. Olmi, H. Petrascu, S. Piantelli, G. Poggi, E. Rosato, D. Santonocito, G. Spadaccini, A.A. Stefanini, T. Twaróg, M. Vigilante
1 :  LPCC - Laboratoire de Physique Corpusculaire de Caen
http://www.lpc-caen.in2p3.fr/
CNRS : UMR6534 – IN2P3 – Université de Caen Basse-Normandie – Ecole Nationale Supérieure d'Ingénieurs de Caen
ENSICAEN - 6, boulevard du Marechal Juin 14050 Caen Cedex
France
2 :  IPNO - Institut de Physique Nucléaire d'Orsay
http://ipnweb.in2p3.fr
CNRS : UMR8608 – IN2P3 – Université Paris XI - Paris Sud
IPN - 15, rue Georges Clemenceau - 91406 ORSAY CEDEX
France
3 :  GANIL - Grand Accélérateur National d'Ions Lourds
http://www.ganil-spiral2.eu
CNRS : UPR3266 – IN2P3 – CEA : DSM/GANIL
Bvd Henri Becquerel - BP 55027 - 14076 CAEN CEDEX 5
France
Dynamique et thermodynamique nucléaire
The response of silicon-silicon-CsI(Tl) telescopes, developed within the FAZIA collaboration, to fragments produced in nuclear reactions 84Kr+120-124Sn at 35 A MeV, has been used to study ion identification methods. Two techniques are considered for the identification of the nuclear products in the silicon stages. The standard ΔE−E one requires signals induced in two detection layers by ions punching through the first one. Conversely, the digital Pulse Shape Analysis (PSA) allows the identification of ions stopped in the first silicon layer. The capabilities of these two identification methods have been compared for different mountings of the silicons, i.e. rear (particles entering through the low electric field side) or front (particles entering through the high electric field side) side injection. The ΔE−E identification method gives exactly the same results in both configurations. At variance, the pulse shape discrimination is very sensitive to the detector mounting. In case of rear side injection, the identification with the "energy vs. charge rise time" PSA method presents energy thresholds which are significantly lower than in the case of front side injection.

Articles dans des revues avec comité de lecture
2013
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment (Nucl. Instr.& Meth. Phys. A)
Publisher Elsevier
ISSN 0168-9002 
701
145-152

GANIL 2013-003 I
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