| Domaine : |
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| Titre : |
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Superconducting properties of aluminium thin films after ion implantation at liquid helium temperatures |
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| Auteur(s) : |
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A.M. Lamoise1, J. Chaumont1, F. Meunier2, H. Bernas3 |
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| Laboratoire : |
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| Résumé : |
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Using a recent modification of the Orsay ion implantor, Al, O, He, H and D were implanted into Al thin films at temperatures below 6 K. The critical temperature Tc of the implanted films depends on the implanted ion dose and range distribution as well as on radiation damage effects. The higher limit of Tc ranges from 2.7 K to 4.1 K for Al, O and He implantations. It reaches 6.75 K for H, at an average concentration near AlH2. |
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Langue du texte
intégral : |
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Anglais |
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Date de production,
écriture : |
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1975 |
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| Journal : |
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Journal de Physique Lettres |
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| Audience : |
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non spécifiée |
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| Type de publication : |
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Articles dans des revues avec comité de lecture |
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| Date de publication : |
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1975 |
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| Volume : |
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36 |
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| Numéro : |
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11 |
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| Page, identifiant, ... : |
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271-273 |
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| Mots Clés : |
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aluminium – ion implantation – superconducting materials – superconducting thin films – superconducting transition point – Al – O – He – H – D – critical temperature – Al thin films – liquid He temperatures – superconducting properties |
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