| HAL : hal-00546391, version 1 |
| Code Bibliographique ADS : 2009JPhCS.193a2083B |
| DOI : 10.1088/1742-6596/193/1/012083 |
| Fiche détaillée | Récupérer au format |
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| 16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 16), France (2009) |
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| Plasma waves Terahertz detection by field effect transistor in Quantinzing magnetic fields |
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| S. Boubanga-Tombet1F. Teppe1W. Knap1K. Karpierz2J. Lusakowski2M. Grynberg2M. I. Dyakonov3J. LyonnetJ. M. Peiris |
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| (11/2009) |
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| Detection of THz radiation by a Field Effect Transistor InGaAs/InAlAs transistor was investigated at 4.2 K as a function of the magnetic field and gate voltage. We observed oscillations of the photovoltaic signal analogous to Shubnikov-de Haas oscillations, as well as their strong enhancement at the cyclotron resonance conditions. The results are successfully quantitatively described within the frame of a recent theory, taking into account a new source of nonlinearity related to Shubnikov-de Haas effect. We show that the detection is due to gated plasmon. |
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| 1 : | GES - Groupe d'étude des semiconducteurs |
| 2 : | Institute of Experimental Physics, Warsaw University |
| 3 : | LPTA - Laboratoire de Physique Théorique et Astroparticules |
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| Domaine | : | Physique/Physique/Physique Générale |
| hal-00546391, version 1 | |
| http://hal.archives-ouvertes.fr/hal-00546391 | |
| oai:hal.archives-ouvertes.fr:hal-00546391 | |
| Contributeur : Dominique Coquillat | |
| Soumis le : Mardi 14 Décembre 2010, 11:18:54 | |
| Dernière modification le : Mardi 14 Décembre 2010, 11:18:54 | |