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Journal Articles Applied Physics Letters Year : 1996

Helium ion-induced stoichiometry modification in hydrogenated silicon oxide films

, , (1)
1
C. Godet
CV
R. Etamadi
  • Function : Author
C. Clerc
  • Function : Author
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse

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Physics [physics] Physics [physics] Instrumentation and Detectors [physics.ins-det]

Jocelyne Lorgeril  : Connect in order to contact the contributor

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Submitted on : Monday, February 22, 1999-11:00:52 AM

Last modification on : Tuesday, October 18, 2022-3:42:23 AM

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in2p3-00000510 , version 1 (22-02-1999)

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C. Godet, R. Etamadi, C. Clerc. Helium ion-induced stoichiometry modification in hydrogenated silicon oxide films. Applied Physics Letters, 1996, 69, pp.3845-3847. ⟨in2p3-00000510⟩

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