Helium ion-induced stoichiometry modification in hydrogenated silicon oxide films - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 1996

Helium ion-induced stoichiometry modification in hydrogenated silicon oxide films

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C. Godet
R. Etamadi
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in2p3-00000510 , version 1 (22-02-1999)

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  • HAL Id : in2p3-00000510 , version 1

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C. Godet, R. Etamadi, C. Clerc. Helium ion-induced stoichiometry modification in hydrogenated silicon oxide films. Applied Physics Letters, 1996, 69, pp.3845-3847. ⟨in2p3-00000510⟩
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