Realization of Si$_{1-x-y}$Ge$_x$C$_y$/Si heterostructures by pulsed laser induced epitaxy of C$^+$ implanted pseudomorphic SiGe films and of a SiGeC:H films deposited on Si(100) - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Conference Papers Year : 1995

Realization of Si$_{1-x-y}$Ge$_x$C$_y$/Si heterostructures by pulsed laser induced epitaxy of C$^+$ implanted pseudomorphic SiGe films and of a SiGeC:H films deposited on Si(100)

J. Boulmer
  • Function : Author
A. Desmur-Larre
  • Function : Author
C. Guedj
  • Function : Author
D. Debarre
  • Function : Author
P. Boucaud
F.H. Julien
  • Function : Author
E. Finkman
  • Function : Author
R. Laval
  • Function : Author
J.B. Ozenne
  • Function : Author
H. Yang
  • Function : Author
D. Bouchier
  • Function : Author
C. Godet
I Cabarrocas P. Roca
  • Function : Author
G. Calvarin
  • Function : Author
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Dates and versions

in2p3-00000644 , version 1 (02-03-1999)

Identifiers

  • HAL Id : in2p3-00000644 , version 1

Cite

J. Boulmer, A. Desmur-Larre, C. Guedj, D. Debarre, P. Boucaud, et al.. Realization of Si$_{1-x-y}$Ge$_x$C$_y$/Si heterostructures by pulsed laser induced epitaxy of C$^+$ implanted pseudomorphic SiGe films and of a SiGeC:H films deposited on Si(100). Laser-Induced Thin Film Processing, Feb 1995, San Jose, United States. pp.367-372. ⟨in2p3-00000644⟩
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