Ion-dose-dependent microstructure in amorphous Ge

M.C. Ridgway; C.J. Glover; K.M. Yu; G.J. Foran; C. Clerc; J.L. Hansen; A.N. Larsen

Journal Articles Physical Review B: Condensed Matter and Materials Physics (1998-2015) Year : 2000

Ion-dose-dependent microstructure in amorphous Ge

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1

M.C. Ridgway

Function : Author

C.J. Glover

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K.M. Yu

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G.J. Foran

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C. Clerc

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Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse

J.L. Hansen

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A.N. Larsen

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Jocelyne Lorgeril : Connect in order to contact the contributor

https://hal.in2p3.fr/in2p3-00005565

Submitted on : Monday, July 10, 2000-4:22:58 PM

Last modification on : Friday, June 2, 2023-3:36:26 PM

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in2p3-00005565 , version 1 (10-07-2000)

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HAL Id : in2p3-00005565 , version 1

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M.C. Ridgway, C.J. Glover, K.M. Yu, G.J. Foran, C. Clerc, et al.. Ion-dose-dependent microstructure in amorphous Ge. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 61, pp.12586-12589. ⟨in2p3-00005565⟩

Ion-dose-dependent microstructure in amorphous Ge

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