Ion-dose-dependent microstructure in amorphous Ge - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Physical Review B: Condensed Matter and Materials Physics (1998-2015) Year : 2000

Ion-dose-dependent microstructure in amorphous Ge

M.C. Ridgway
  • Function : Author
C.J. Glover
  • Function : Author
K.M. Yu
  • Function : Author
G.J. Foran
  • Function : Author
J.L. Hansen
  • Function : Author
A.N. Larsen
  • Function : Author
No file

Dates and versions

in2p3-00005565 , version 1 (10-07-2000)

Identifiers

  • HAL Id : in2p3-00005565 , version 1

Cite

M.C. Ridgway, C.J. Glover, K.M. Yu, G.J. Foran, C. Clerc, et al.. Ion-dose-dependent microstructure in amorphous Ge. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 61, pp.12586-12589. ⟨in2p3-00005565⟩
4 View
0 Download

Share

Gmail Facebook X LinkedIn More