Annealing kinetics during rapid and classical thermal processing of a laser induced defect in n-type silicon - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Applied Physics Letters Year : 1986

Annealing kinetics during rapid and classical thermal processing of a laser induced defect in n-type silicon

W.O. Adekoya
  • Function : Author
J.C. Muller
  • Function : Author
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in2p3-00006151 , version 1 (22-09-2000)

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  • HAL Id : in2p3-00006151 , version 1

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W.O. Adekoya, J.C. Muller, P. Siffert. Annealing kinetics during rapid and classical thermal processing of a laser induced defect in n-type silicon. Applied Physics Letters, 1986, 49, pp.1429-1432. ⟨in2p3-00006151⟩
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