Field enhanced neutralization of electrically active boron in hydrogen implantated schottky diodes - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Applied physics. A, Materials science & processing Year : 1986

Field enhanced neutralization of electrically active boron in hydrogen implantated schottky diodes

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in2p3-00006153 , version 1 (22-09-2000)

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  • HAL Id : in2p3-00006153 , version 1

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T. Zundel, E. Courcelle, A. Mesli, J.C. Muller, P. Siffert. Field enhanced neutralization of electrically active boron in hydrogen implantated schottky diodes. Applied physics. A, Materials science & processing, 1986, 40. ⟨in2p3-00006153⟩
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