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Journal Articles Applied physics. A, Materials science & processing Year : 1986

Passivation of laser induced defects in silicon by low energy hydrogen ion implantation

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in2p3-00006155 , version 1 (22-09-2000)

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  • HAL Id : in2p3-00006155 , version 1

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A. Slaoui, A. Barhdadi, J.C. Muller, P. Siffert. Passivation of laser induced defects in silicon by low energy hydrogen ion implantation. Applied physics. A, Materials science & processing, 1986, 39, pp.3184-3188. ⟨in2p3-00006155⟩
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