Diode-pumped femtosecond oscillators using ultra-broad-band Yb-doped crystals and mode-locked using low-temperature grown or ion implanted saturable-absorber mirrors - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles European Physical Journal: Applied Physics Year : 2002

Diode-pumped femtosecond oscillators using ultra-broad-band Yb-doped crystals and mode-locked using low-temperature grown or ion implanted saturable-absorber mirrors

G.J. Valentine
  • Function : Author
P. Raybaut
  • Function : Author
A.-J. Kemp
  • Function : Author
D.J.L. Birkin
  • Function : Author
W. Sibbett
  • Function : Author
S. Mohr
  • Function : Author
D. Kopf
  • Function : Author
D. Burns
  • Function : Author
A. Courjaud
  • Function : Author
C. Honninger
  • Function : Author
F. Salin
  • Function : Author
R. Gaume
  • Function : Author
A. Aron
  • Function : Author
G. Aka
  • Function : Author
B. Viana
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Dates and versions

in2p3-00012652 , version 1 (13-03-2003)

Identifiers

  • HAL Id : in2p3-00012652 , version 1

Cite

Frédéric Druon, G.J. Valentine, S. Chenais, P. Raybaut, François Balembois, et al.. Diode-pumped femtosecond oscillators using ultra-broad-band Yb-doped crystals and mode-locked using low-temperature grown or ion implanted saturable-absorber mirrors. European Physical Journal: Applied Physics, 2002, 20, pp.177-182. ⟨in2p3-00012652⟩
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